PMZB790SN,315 Nexperia USA Inc.
Виробник: Nexperia USA Inc.Description: MOSFET N-CH 60V 650MA DFN1006B-3
Packaging: Bulk
Package / Case: SC-101, SOT-883
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 650mA (Ta)
Rds On (Max) @ Id, Vgs: 940mOhm @ 300mA, 10V
Power Dissipation (Max): 360mW (Ta), 2.7W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: DFN1006B-3
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 1.37 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 35 pF @ 30 V
на замовлення 168722 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 2959+ | 7.57 грн |
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Технічний опис PMZB790SN,315 Nexperia USA Inc.
Description: MOSFET N-CH 60V 650MA DFN1006B-3, Packaging: Tape & Reel (TR), Package / Case: 3-XFDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 650mA (Ta), Rds On (Max) @ Id, Vgs: 940mOhm @ 300mA, 10V, Power Dissipation (Max): 360mW (Ta), 2.7W (Tc), Vgs(th) (Max) @ Id: 3V @ 250µA, Supplier Device Package: DFN1006B-3, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 1.37 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 35 pF @ 30 V.
Інші пропозиції PMZB790SN,315
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
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PMZB790SN,315 | Виробник : NEXPERIA |
Trans MOSFET N-CH 60V 0.65A 3-Pin DFN-B T/R |
товару немає в наявності |
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PMZB790SN,315 | Виробник : Nexperia USA Inc. |
Description: MOSFET N-CH 60V 650MA DFN1006B-3 Packaging: Tape & Reel (TR) Package / Case: 3-XFDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 650mA (Ta) Rds On (Max) @ Id, Vgs: 940mOhm @ 300mA, 10V Power Dissipation (Max): 360mW (Ta), 2.7W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: DFN1006B-3 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 1.37 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 35 pF @ 30 V |
товару немає в наявності |
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PMZB790SN,315 | Виробник : Nexperia USA Inc. |
Description: MOSFET N-CH 60V 650MA DFN1006B-3 Packaging: Cut Tape (CT) Package / Case: 3-XFDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 650mA (Ta) Rds On (Max) @ Id, Vgs: 940mOhm @ 300mA, 10V Power Dissipation (Max): 360mW (Ta), 2.7W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: DFN1006B-3 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 1.37 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 35 pF @ 30 V |
товару немає в наявності |