PN2222A TIN/LEAD Central Semiconductor Corp
Виробник: Central Semiconductor Corp
Description: 40V 800MA 625MW TH TRANSISTOR-SM
Packaging: Box
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Supplier Device Package: TO-92-3
Transistor Type: NPN
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Current - Collector Cutoff (Max): 10nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Frequency - Transition: 300MHz
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 625 mW
Description: 40V 800MA 625MW TH TRANSISTOR-SM
Packaging: Box
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Supplier Device Package: TO-92-3
Transistor Type: NPN
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Current - Collector Cutoff (Max): 10nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Frequency - Transition: 300MHz
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 625 mW
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Технічний опис PN2222A TIN/LEAD Central Semiconductor Corp
Description: 40V 800MA 625MW TH TRANSISTOR-SM, Packaging: Box, Package / Case: TO-226-3, TO-92-3 (TO-226AA), Mounting Type: Through Hole, Supplier Device Package: TO-92-3, Transistor Type: NPN, Operating Temperature: -65°C ~ 150°C (TJ), Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA, Current - Collector Cutoff (Max): 10nA, DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V, Frequency - Transition: 300MHz, Current - Collector (Ic) (Max): 800 mA, Voltage - Collector Emitter Breakdown (Max): 40 V, Power - Max: 625 mW.
Інші пропозиції PN2222A TIN/LEAD
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
 |
PN2222A TIN/LEAD | Виробник : Central Semiconductor |
 Bipolar Transistors - BJT NPN 75Vcbo 40Vceo 6.0Vebo 800mA 625mW |
товару немає в наявності |