PQMD10Z Nexperia
Виробник: Nexperia
Bipolar Transistors - BJT NPN/PNP resistor-equipped transistors; R1 = 47 kohm, R2 = 47 kohm
| Кількість | Ціна |
|---|---|
| 16+ | 21.82 грн |
| 25+ | 13.34 грн |
| 100+ | 4.92 грн |
| 1000+ | 3.87 грн |
| 5000+ | 3.23 грн |
| 10000+ | 2.81 грн |
| 25000+ | 2.67 грн |
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Технічний опис PQMD10Z Nexperia
Description: TRANS PREBIAS 1NPN 1PNP 6DFN, Qualification: AEC-Q101, Grade: Automotive, Part Status: Active, Supplier Device Package: DFN1010B-6, Resistor - Emitter Base (R2): 47kOhms, Resistor - Base (R1): 2.2kOhms, Frequency - Transition: 230MHz, 180MHz, DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V, Current - Collector Cutoff (Max): 1µA, Vce Saturation (Max) @ Ib, Ic: 100mV @ 250µA, 5mA, Voltage - Collector Emitter Breakdown (Max): 50V, Current - Collector (Ic) (Max): 100mA, Power - Max: 230mW, Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual), Mounting Type: Surface Mount, Package / Case: 6-XFDFN Exposed Pad, Packaging: Tape & Reel (TR).
Інші пропозиції PQMD10Z за ціною від 4.47 грн до 22.15 грн
| Фото | Назва | Виробник | Інформація |
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Ціна |
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PQMD10Z | Nexperia USA Inc. |
Description: TRANS PREBIAS 1NPN 1PNP 6DFN Qualification: AEC-Q101 Grade: Automotive Part Status: Active Supplier Device Package: DFN1010B-6 Resistor - Emitter Base (R2): 47kOhms Resistor - Base (R1): 2.2kOhms Frequency - Transition: 230MHz, 180MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V Current - Collector Cutoff (Max): 1µA Vce Saturation (Max) @ Ib, Ic: 100mV @ 250µA, 5mA Voltage - Collector Emitter Breakdown (Max): 50V Current - Collector (Ic) (Max): 100mA Power - Max: 230mW Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual) Mounting Type: Surface Mount Package / Case: 6-XFDFN Exposed Pad Packaging: Cut Tape (CT) |
на замовлення 4354 шт: термін постачання 21-31 дні (днів) |
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| PQMD10Z |
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Виробник: Nexperia USA Inc.
Description: TRANS PREBIAS 1NPN 1PNP 6DFN
Qualification: AEC-Q101
Grade: Automotive
Part Status: Active
Supplier Device Package: DFN1010B-6
Resistor - Emitter Base (R2): 47kOhms
Resistor - Base (R1): 2.2kOhms
Frequency - Transition: 230MHz, 180MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V
Current - Collector Cutoff (Max): 1µA
Vce Saturation (Max) @ Ib, Ic: 100mV @ 250µA, 5mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Power - Max: 230mW
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Mounting Type: Surface Mount
Package / Case: 6-XFDFN Exposed Pad
Packaging: Cut Tape (CT)
Description: TRANS PREBIAS 1NPN 1PNP 6DFN
Qualification: AEC-Q101
Grade: Automotive
Part Status: Active
Supplier Device Package: DFN1010B-6
Resistor - Emitter Base (R2): 47kOhms
Resistor - Base (R1): 2.2kOhms
Frequency - Transition: 230MHz, 180MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V
Current - Collector Cutoff (Max): 1µA
Vce Saturation (Max) @ Ib, Ic: 100mV @ 250µA, 5mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Power - Max: 230mW
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Mounting Type: Surface Mount
Package / Case: 6-XFDFN Exposed Pad
Packaging: Cut Tape (CT)
на замовлення 4354 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 15+ | 22.15 грн |
| 24+ | 13.10 грн |
| 100+ | 8.19 грн |
| 500+ | 5.67 грн |
| 1000+ | 5.02 грн |
| 2000+ | 4.47 грн |