на замовлення 2181 шт:
термін постачання 21-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 14+ | 23.85 грн |
| 18+ | 17.46 грн |
| 100+ | 8.59 грн |
| 1000+ | 4.4 грн |
| 5000+ | 3.46 грн |
| 10000+ | 3 грн |
| 25000+ | 2.66 грн |
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Технічний опис PQMD16Z Nexperia
Description: TRANS PREBIAS 1NPN 1PNP 50V 6DFN, Packaging: Tape & Reel (TR), Package / Case: 6-XFDFN Exposed Pad, Mounting Type: Surface Mount, Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual), Power - Max: 350mW, Current - Collector (Ic) (Max): 100mA, Voltage - Collector Emitter Breakdown (Max): 50V, Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA, Current - Collector Cutoff (Max): 1µA, DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 5V, Frequency - Transition: 230MHz, 180MHz, Resistor - Base (R1): 22kOhms, Resistor - Emitter Base (R2): 47kOhms, Supplier Device Package: DFN1010B-6.
Інші пропозиції PQMD16Z
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
|---|---|---|---|---|---|
| PQMD16Z | Виробник : NEXPERIA |
 PQMD16Z Complementary transistors |
товар відсутній |
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PQMD16Z | Виробник : Nexperia USA Inc. |
Description: TRANS PREBIAS 1NPN 1PNP 50V 6DFN Packaging: Tape & Reel (TR) Package / Case: 6-XFDFN Exposed Pad Mounting Type: Surface Mount Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual) Power - Max: 350mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA Current - Collector Cutoff (Max): 1µA DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 5V Frequency - Transition: 230MHz, 180MHz Resistor - Base (R1): 22kOhms Resistor - Emitter Base (R2): 47kOhms Supplier Device Package: DFN1010B-6 |
товар відсутній |
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PQMD16Z | Виробник : Nexperia USA Inc. |
Description: TRANS PREBIAS 1NPN 1PNP 50V 6DFN Packaging: Cut Tape (CT) Package / Case: 6-XFDFN Exposed Pad Mounting Type: Surface Mount Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual) Power - Max: 350mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA Current - Collector Cutoff (Max): 1µA DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 5V Frequency - Transition: 230MHz, 180MHz Resistor - Base (R1): 22kOhms Resistor - Emitter Base (R2): 47kOhms Supplier Device Package: DFN1010B-6 |
товар відсутній |