PQMD3Z Nexperia USA Inc.
Виробник: Nexperia USA Inc.Description: TRANS PREBIAS 1NPN 1PNP 6DFN
Packaging: Cut Tape (CT)
Package / Case: 6-XFDFN Exposed Pad
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Power - Max: 230mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 1µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V
Frequency - Transition: 230MHz, 180MHz
Resistor - Base (R1): 10kOhms
Resistor - Emitter Base (R2): 10kOhms
Supplier Device Package: DFN1010B-6
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
на замовлення 2050 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 16+ | 20.88 грн |
| 25+ | 12.68 грн |
| 100+ | 7.92 грн |
| 500+ | 5.49 грн |
| 1000+ | 4.86 грн |
| 2000+ | 4.32 грн |
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Технічний опис PQMD3Z Nexperia USA Inc.
Description: TRANS PREBIAS 1NPN 1PNP 6DFN, Packaging: Tape & Reel (TR), Package / Case: 6-XFDFN Exposed Pad, Mounting Type: Surface Mount, Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual), Power - Max: 230mW, Current - Collector (Ic) (Max): 100mA, Voltage - Collector Emitter Breakdown (Max): 50V, Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA, Current - Collector Cutoff (Max): 1µA, DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V, Frequency - Transition: 230MHz, 180MHz, Resistor - Base (R1): 10kOhms, Resistor - Emitter Base (R2): 10kOhms, Supplier Device Package: DFN1010B-6, Grade: Automotive, Part Status: Active, Qualification: AEC-Q101.
Інші пропозиції PQMD3Z
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
| PQMD3Z | Виробник : NEXPERIA |
PQMD3Z Complementary transistors |
товару немає в наявності |
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PQMD3Z | Виробник : Nexperia USA Inc. |
Description: TRANS PREBIAS 1NPN 1PNP 6DFN Packaging: Tape & Reel (TR) Package / Case: 6-XFDFN Exposed Pad Mounting Type: Surface Mount Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual) Power - Max: 230mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA Current - Collector Cutoff (Max): 1µA DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V Frequency - Transition: 230MHz, 180MHz Resistor - Base (R1): 10kOhms Resistor - Emitter Base (R2): 10kOhms Supplier Device Package: DFN1010B-6 Grade: Automotive Part Status: Active Qualification: AEC-Q101 |
товару немає в наявності |
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PQMD3Z | Виробник : Nexperia |
Bipolar Transistors - BJT NPN/NPN resistor-equipped transistors;R1 = 2.2 kΩ, R2 = 47 kΩ |
товару немає в наявності |