Технічний опис PRF13750HR9 NXP Semiconductors
Description: RF MOSFET LDMOS NI1230, Gain: 20.6dB, Power - Output: 650W, Configuration: Dual, Frequency: 700MHz ~ 1.3GHz, Current Rating (Amps): 10µA, Package / Case: SOT-979A, Packaging: Strip, Voltage - Rated: 105 V, Part Status: Obsolete, Supplier Device Package: NI-1230-4H, Technology: LDMOS.
Інші пропозиції PRF13750HR9
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
 |
PRF13750HR9 | NXP USA Inc. |
Description: RF MOSFET LDMOS NI1230 Gain: 20.6dB Power - Output: 650W Configuration: Dual Frequency: 700MHz ~ 1.3GHz Current Rating (Amps): 10µA Package / Case: SOT-979A Packaging: Strip Voltage - Rated: 105 V Part Status: Obsolete Supplier Device Package: NI-1230-4H Technology: LDMOS |
товару немає в наявності |
В кошику од. на суму грн. |
| PRF13750HR9 |
Виробник: NXP USA Inc.
Description: RF MOSFET LDMOS NI1230
Gain: 20.6dB
Power - Output: 650W
Configuration: Dual
Frequency: 700MHz ~ 1.3GHz
Current Rating (Amps): 10µA
Package / Case: SOT-979A
Packaging: Strip
Voltage - Rated: 105 V
Part Status: Obsolete
Supplier Device Package: NI-1230-4H
Technology: LDMOS
Description: RF MOSFET LDMOS NI1230
Gain: 20.6dB
Power - Output: 650W
Configuration: Dual
Frequency: 700MHz ~ 1.3GHz
Current Rating (Amps): 10µA
Package / Case: SOT-979A
Packaging: Strip
Voltage - Rated: 105 V
Part Status: Obsolete
Supplier Device Package: NI-1230-4H
Technology: LDMOS
товару немає в наявності
В кошику
од. на суму грн.