PRMH10Z Nexperia USA Inc.
Виробник: Nexperia USA Inc.Description: TRANS PREBIAS 2NPN 50V DFN1412-6
Packaging: Cut Tape (CT)
Package / Case: 6-XFDFN Exposed Pad
Mounting Type: Surface Mount
Transistor Type: 2 NPN - Pre-Biased (Dual)
Power - Max: 480mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 100mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V
Frequency - Transition: 230MHz
Resistor - Base (R1): 2.2kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: DFN1412-6
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
на замовлення 3920 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 16+ | 19.85 грн |
| 27+ | 11.54 грн |
| 100+ | 7.22 грн |
| 500+ | 4.98 грн |
| 1000+ | 4.40 грн |
| 2000+ | 3.91 грн |
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Технічний опис PRMH10Z Nexperia USA Inc.
Description: TRANS PREBIAS 2NPN 50V DFN1412-6, Packaging: Tape & Reel (TR), Package / Case: 6-XFDFN Exposed Pad, Mounting Type: Surface Mount, Transistor Type: 2 NPN - Pre-Biased (Dual), Power - Max: 480mW, Current - Collector (Ic) (Max): 100mA, Voltage - Collector Emitter Breakdown (Max): 50V, Vce Saturation (Max) @ Ib, Ic: 100mV @ 250µA, 5mA, Current - Collector Cutoff (Max): 100nA, DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V, Frequency - Transition: 230MHz, Resistor - Base (R1): 2.2kOhms, Resistor - Emitter Base (R2): 47kOhms, Supplier Device Package: DFN1412-6, Grade: Automotive, Part Status: Active, Qualification: AEC-Q101.
Інші пропозиції PRMH10Z
| Фото | Назва | Виробник | Інформація |
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PRMH10Z | Виробник : Nexperia USA Inc. |
Description: TRANS PREBIAS 2NPN 50V DFN1412-6 Packaging: Tape & Reel (TR) Package / Case: 6-XFDFN Exposed Pad Mounting Type: Surface Mount Transistor Type: 2 NPN - Pre-Biased (Dual) Power - Max: 480mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 100mV @ 250µA, 5mA Current - Collector Cutoff (Max): 100nA DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V Frequency - Transition: 230MHz Resistor - Base (R1): 2.2kOhms Resistor - Emitter Base (R2): 47kOhms Supplier Device Package: DFN1412-6 Grade: Automotive Part Status: Active Qualification: AEC-Q101 |
товару немає в наявності |
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PRMH10Z | Виробник : Nexperia |
Bipolar Transistors - BJT PRMH10/SOT1268 DFN1412-6 |
товару немає в наявності |