Технічний опис PS140M-D32_R1_00301 Panjit
Category: Protection diodes - arrays, Description: Diode: TVS; 25.5V; 10A; bidirectional; DFN2; Ch: 1, Mounting: SMD, Breakdown voltage: 25.5V, Max. forward impulse current: 10A, Max. off-state voltage: 24V, Semiconductor structure: bidirectional, Leakage current: 0.5µA, Case: DFN2, Capacitance: 0.5pF, Type of diode: TVS, Number of channels: 1.
Інші пропозиції PS140M-D32_R1_00301
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ |
|---|---|---|---|---|---|
| PS140M-D32_R1_00301 | PanJit Semiconductor |
Category: Protection diodes - arrays Description: Diode: TVS; 25.5V; 10A; bidirectional; DFN2; Ch: 1 Mounting: SMD Breakdown voltage: 25.5V Max. forward impulse current: 10A Max. off-state voltage: 24V Semiconductor structure: bidirectional Leakage current: 0.5µA Case: DFN2 Capacitance: 0.5pF Type of diode: TVS Number of channels: 1 |
товару немає в наявності |
Мінімальне замовлення: 10000 шт В кошику од. на суму грн. |
| PS140M-D32_R1_00301 |
Виробник: PanJit Semiconductor
Category: Protection diodes - arrays
Description: Diode: TVS; 25.5V; 10A; bidirectional; DFN2; Ch: 1
Mounting: SMD
Breakdown voltage: 25.5V
Max. forward impulse current: 10A
Max. off-state voltage: 24V
Semiconductor structure: bidirectional
Leakage current: 0.5µA
Case: DFN2
Capacitance: 0.5pF
Type of diode: TVS
Number of channels: 1
Category: Protection diodes - arrays
Description: Diode: TVS; 25.5V; 10A; bidirectional; DFN2; Ch: 1
Mounting: SMD
Breakdown voltage: 25.5V
Max. forward impulse current: 10A
Max. off-state voltage: 24V
Semiconductor structure: bidirectional
Leakage current: 0.5µA
Case: DFN2
Capacitance: 0.5pF
Type of diode: TVS
Number of channels: 1
товару немає в наявності
Мінімальне замовлення: 10000 шт
В кошику
од. на суму грн.