PSC1065B1-QZ Nexperia
Виробник: Nexperia
SiC Schottky Diodes 650 V, 10 A SiC Schottky diode in bare die for automotive applications
SiC Schottky Diodes 650 V, 10 A SiC Schottky diode in bare die for automotive applications
на замовлення 7865 шт:
термін постачання 21-30 дні (днів)
| Кількість | Ціна |
|---|---|
| 2+ | 350.39 грн |
| 10+ | 226.49 грн |
| 100+ | 147.90 грн |
| 500+ | 131.30 грн |
| 1000+ | 112.44 грн |
| 2500+ | 105.64 грн |
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Технічний опис PSC1065B1-QZ Nexperia
Description: DIODE SIL CARBIDE 650V 10A DIE, Packaging: Tape & Reel (TR), Package / Case: Die, Mounting Type: Surface Mount, Speed: No Recovery Time > 500mA (Io), Reverse Recovery Time (trr): 0 ns, Technology: SiC (Silicon Carbide) Schottky, Capacitance @ Vr, F: 340pF @ 1V, 1MHz, Current - Average Rectified (Io): 10A, Supplier Device Package: Die, Operating Temperature - Junction: 175°C, Grade: Automotive, Voltage - DC Reverse (Vr) (Max): 650 V, Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 10 A, Current - Reverse Leakage @ Vr: 60 µA @ 650 V, Qualification: AEC-Q101.
Інші пропозиції PSC1065B1-QZ
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
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PSC1065B1-QZ | Виробник : Nexperia USA Inc. |
Description: DIODE SIL CARBIDE 650V 10A DIE Packaging: Tape & Reel (TR) Package / Case: Die Mounting Type: Surface Mount Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 340pF @ 1V, 1MHz Current - Average Rectified (Io): 10A Supplier Device Package: Die Operating Temperature - Junction: 175°C Grade: Automotive Voltage - DC Reverse (Vr) (Max): 650 V Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 10 A Current - Reverse Leakage @ Vr: 60 µA @ 650 V Qualification: AEC-Q101 |
товару немає в наявності |
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PSC1065B1-QZ | Виробник : Nexperia USA Inc. |
Description: DIODE SIL CARBIDE 650V 10A DIE Packaging: Cut Tape (CT) Package / Case: Die Mounting Type: Surface Mount Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 340pF @ 1V, 1MHz Current - Average Rectified (Io): 10A Supplier Device Package: Die Operating Temperature - Junction: 175°C Grade: Automotive Voltage - DC Reverse (Vr) (Max): 650 V Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 10 A Current - Reverse Leakage @ Vr: 60 µA @ 650 V Qualification: AEC-Q101 |
товару немає в наявності |