PSC1065B1AZ Nexperia USA Inc.
Виробник: Nexperia USA Inc.
Description: DIODE SIL CARBIDE 650V 10A DIE
Packaging: Tape & Reel (TR)
Package / Case: Die
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 340pF @ 1V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: Die
Operating Temperature - Junction: 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 10 A
Current - Reverse Leakage @ Vr: 60 µA @ 650 V
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Технічний опис PSC1065B1AZ Nexperia USA Inc.
Description: DIODE SIL CARBIDE 650V 10A DIE, Packaging: Tape & Reel (TR), Package / Case: Die, Mounting Type: Surface Mount, Speed: No Recovery Time > 500mA (Io), Reverse Recovery Time (trr): 0 ns, Technology: SiC (Silicon Carbide) Schottky, Capacitance @ Vr, F: 340pF @ 1V, 1MHz, Current - Average Rectified (Io): 10A, Supplier Device Package: Die, Operating Temperature - Junction: 175°C, Voltage - DC Reverse (Vr) (Max): 650 V, Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 10 A, Current - Reverse Leakage @ Vr: 60 µA @ 650 V.
Інші пропозиції PSC1065B1AZ
| Фото | Назва | Виробник | Інформація | Доступність | Ціна |
|---|---|---|---|---|---|
|
|
PSC1065B1AZ | Nexperia USA Inc. |
Description: DIODE SIL CARBIDE 650V 10A DIE Packaging: Cut Tape (CT) Package / Case: Die Mounting Type: Surface Mount Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 340pF @ 1V, 1MHz Current - Average Rectified (Io): 10A Supplier Device Package: Die Operating Temperature - Junction: 175°C Voltage - DC Reverse (Vr) (Max): 650 V Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 10 A Current - Reverse Leakage @ Vr: 60 µA @ 650 V |
товару немає в наявності |
В кошику од. на суму грн. |
 |
PSC1065B1AZ | Nexperia |
SiC Schottky Diodes PSC1065B1/NBD2/Bare Die |
товару немає в наявності |
Мінімальне замовлення: 2 шт В кошику од. на суму грн. |
| PSC1065B1AZ |
|
Виробник: Nexperia USA Inc.
Description: DIODE SIL CARBIDE 650V 10A DIE
Packaging: Cut Tape (CT)
Package / Case: Die
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 340pF @ 1V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: Die
Operating Temperature - Junction: 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 10 A
Current - Reverse Leakage @ Vr: 60 µA @ 650 V
Description: DIODE SIL CARBIDE 650V 10A DIE
Packaging: Cut Tape (CT)
Package / Case: Die
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 340pF @ 1V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: Die
Operating Temperature - Junction: 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 10 A
Current - Reverse Leakage @ Vr: 60 µA @ 650 V
товару немає в наявності
В кошику
од. на суму грн.
| PSC1065B1AZ |
|
Виробник: Nexperia
SiC Schottky Diodes PSC1065B1/NBD2/Bare Die
SiC Schottky Diodes PSC1065B1/NBD2/Bare Die
товару немає в наявності
Мінімальне замовлення: 2 шт
В кошику
од. на суму грн.