PSMB050N10NS2_R2_00601 Panjit International Inc.
Виробник: Panjit International Inc.Description: 100V/ 5MOHM/ LOW FOM MOSFET
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tj)
Rds On (Max) @ Id, Vgs: 5mOhm @ 50A, 10V
Power Dissipation (Max): 138W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 270µA
Supplier Device Package: TO-263
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3910 pF @ 50 V
на замовлення 617 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 2+ | 218.85 грн |
| 10+ | 149.21 грн |
| 100+ | 103.88 грн |
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Технічний опис PSMB050N10NS2_R2_00601 Panjit International Inc.
Description: 100V/ 5MOHM/ LOW FOM MOSFET, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 120A (Tj), Rds On (Max) @ Id, Vgs: 5mOhm @ 50A, 10V, Power Dissipation (Max): 138W (Tc), Vgs(th) (Max) @ Id: 3.8V @ 270µA, Supplier Device Package: TO-263, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 6V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 3910 pF @ 50 V.
Інші пропозиції PSMB050N10NS2_R2_00601 за ціною від 74.30 грн до 219.72 грн
| Фото | Назва | Виробник | Інформація |
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PSMB050N10NS2_R2_00601 | Виробник : Panjit |
MOSFETs 100V 5mohm Low FOM MOSFET |
на замовлення 790 шт: термін постачання 21-30 дні (днів) |
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| PSMB050N10NS2_R2_00601 | Виробник : PanJit Semiconductor |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 120A; Idm: 480A; 138W; TO263 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 120A Pulsed drain current: 480A Power dissipation: 138W Case: TO263 Gate-source voltage: ±20V On-state resistance: 7mΩ Mounting: SMD Gate charge: 53nC Kind of package: reel; tape Kind of channel: enhancement кількість в упаковці: 1 шт |
товару немає в наявності |
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PSMB050N10NS2_R2_00601 | Виробник : Panjit International Inc. |
Description: 100V/ 5MOHM/ LOW FOM MOSFET Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 120A (Tj) Rds On (Max) @ Id, Vgs: 5mOhm @ 50A, 10V Power Dissipation (Max): 138W (Tc) Vgs(th) (Max) @ Id: 3.8V @ 270µA Supplier Device Package: TO-263 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3910 pF @ 50 V |
товару немає в наявності |
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| PSMB050N10NS2_R2_00601 | Виробник : PanJit Semiconductor |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 120A; Idm: 480A; 138W; TO263 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 120A Pulsed drain current: 480A Power dissipation: 138W Case: TO263 Gate-source voltage: ±20V On-state resistance: 7mΩ Mounting: SMD Gate charge: 53nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |