| Кількість | Ціна |
|---|---|
| 2+ | 200.39 грн |
| 10+ | 144.75 грн |
| 100+ | 87.62 грн |
| 500+ | 63.63 грн |
Відгуки про товар
Написати відгук
Технічний опис PSMB050N10NS2_R2_00601 Panjit
Description: 100V/ 5MOHM/ LOW FOM MOSFET, Input Capacitance (Ciss) (Max) @ Vds: 3910 pF @ 50 V, Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 10 V, Drain to Source Voltage (Vdss): 100 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 6V, 10V, Supplier Device Package: TO-263, Part Status: Active, Packaging: Tape & Reel (TR), Vgs(th) (Max) @ Id: 3.8V @ 270µA, Power Dissipation (Max): 138W (Tc), Rds On (Max) @ Id, Vgs: 5mOhm @ 50A, 10V, Current - Continuous Drain (Id) @ 25°C: 120A (Tj), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB.
Інші пропозиції PSMB050N10NS2_R2_00601 за ціною від 97.34 грн до 207.32 грн
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна | ||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
PSMB050N10NS2_R2_00601 | Виробник : Panjit International Inc. |
 Description: 100V/ 5MOHM/ LOW FOM MOSFETInput Capacitance (Ciss) (Max) @ Vds: 3910 pF @ 50 V Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 10 V Drain to Source Voltage (Vdss): 100 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Supplier Device Package: TO-263 Vgs(th) (Max) @ Id: 3.8V @ 270µA Power Dissipation (Max): 138W (Tc) Rds On (Max) @ Id, Vgs: 5mOhm @ 50A, 10V Current - Continuous Drain (Id) @ 25°C: 120A (Tj) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Part Status: Active Packaging: Cut Tape (CT) |
на замовлення 617 шт: термін постачання 21-31 дні (днів) |
|
||||||||
|
|
PSMB050N10NS2_R2_00601 | Виробник : Panjit International Inc. |
Description: 100V/ 5MOHM/ LOW FOM MOSFET Input Capacitance (Ciss) (Max) @ Vds: 3910 pF @ 50 V Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 10 V Drain to Source Voltage (Vdss): 100 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Supplier Device Package: TO-263 Part Status: Active Packaging: Tape & Reel (TR) Vgs(th) (Max) @ Id: 3.8V @ 270µA Power Dissipation (Max): 138W (Tc) Rds On (Max) @ Id, Vgs: 5mOhm @ 50A, 10V Current - Continuous Drain (Id) @ 25°C: 120A (Tj) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
товару немає в наявності |