| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 200.77 грн |
| 10+ | 145.02 грн |
| 100+ | 87.79 грн |
| 500+ | 63.75 грн |
Відгуки про товар
Написати відгук
Технічний опис PSMB050N10NS2_R2_00601 Panjit
Description: 100V/ 5MOHM/ LOW FOM MOSFET, Input Capacitance (Ciss) (Max) @ Vds: 3910 pF @ 50 V, Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 10 V, Drain to Source Voltage (Vdss): 100 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 6V, 10V, Supplier Device Package: TO-263, Part Status: Active, Packaging: Tape & Reel (TR), Vgs(th) (Max) @ Id: 3.8V @ 270µA, Power Dissipation (Max): 138W (Tc), Rds On (Max) @ Id, Vgs: 5mOhm @ 50A, 10V, Current - Continuous Drain (Id) @ 25°C: 120A (Tj), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB.
Інші пропозиції PSMB050N10NS2_R2_00601 за ціною від 97.53 грн до 207.71 грн
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||
|---|---|---|---|---|---|---|---|---|---|---|---|
 |
PSMB050N10NS2_R2_00601 | Panjit International Inc. |
 Description: 100V/ 5MOHM/ LOW FOM MOSFETInput Capacitance (Ciss) (Max) @ Vds: 3910 pF @ 50 V Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 10 V Drain to Source Voltage (Vdss): 100 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Supplier Device Package: TO-263 Vgs(th) (Max) @ Id: 3.8V @ 270µA Power Dissipation (Max): 138W (Tc) Rds On (Max) @ Id, Vgs: 5mOhm @ 50A, 10V Current - Continuous Drain (Id) @ 25°C: 120A (Tj) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Part Status: Active Packaging: Cut Tape (CT) |
на замовлення 617 шт: термін постачання 21-31 дні (днів) |
|
| PSMB050N10NS2_R2_00601 |
|
Виробник: Panjit International Inc.
Description: 100V/ 5MOHM/ LOW FOM MOSFET
Input Capacitance (Ciss) (Max) @ Vds: 3910 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Supplier Device Package: TO-263
Vgs(th) (Max) @ Id: 3.8V @ 270µA
Power Dissipation (Max): 138W (Tc)
Rds On (Max) @ Id, Vgs: 5mOhm @ 50A, 10V
Current - Continuous Drain (Id) @ 25°C: 120A (Tj)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Part Status: Active
Packaging: Cut Tape (CT)
Description: 100V/ 5MOHM/ LOW FOM MOSFET
Input Capacitance (Ciss) (Max) @ Vds: 3910 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Supplier Device Package: TO-263
Vgs(th) (Max) @ Id: 3.8V @ 270µA
Power Dissipation (Max): 138W (Tc)
Rds On (Max) @ Id, Vgs: 5mOhm @ 50A, 10V
Current - Continuous Drain (Id) @ 25°C: 120A (Tj)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Part Status: Active
Packaging: Cut Tape (CT)
на замовлення 617 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 207.71 грн |
| 10+ | 140.47 грн |
| 100+ | 97.53 грн |