PSMB055N08NS1_R2_00601 Panjit International Inc.
Виробник: Panjit International Inc.Description: 80V/ 5.5MOHM / MV MOSFET
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 108A (Tc)
Rds On (Max) @ Id, Vgs: 5.5mOhm @ 50A, 10V
Power Dissipation (Max): 113.6W (Tc)
Vgs(th) (Max) @ Id: 3.75V @ 250µA
Supplier Device Package: TO-263
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 7 V
Input Capacitance (Ciss) (Max) @ Vds: 4773 pF @ 40 V
на замовлення 5 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 3+ | 140.86 грн |
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Технічний опис PSMB055N08NS1_R2_00601 Panjit International Inc.
Description: 80V/ 5.5MOHM / MV MOSFET, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 108A (Tc), Rds On (Max) @ Id, Vgs: 5.5mOhm @ 50A, 10V, Power Dissipation (Max): 113.6W (Tc), Vgs(th) (Max) @ Id: 3.75V @ 250µA, Supplier Device Package: TO-263, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 7V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 80 V, Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 7 V, Input Capacitance (Ciss) (Max) @ Vds: 4773 pF @ 40 V.
Інші пропозиції PSMB055N08NS1_R2_00601 за ціною від 47.23 грн до 150.20 грн
| Фото | Назва | Виробник | Інформація |
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PSMB055N08NS1_R2_00601 | Виробник : Panjit |
MOSFETs 80V 5.5mohm MV MOSFET |
на замовлення 1163 шт: термін постачання 21-30 дні (днів) |
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| PSMB055N08NS1_R2_00601 | Виробник : PanJit Semiconductor |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 108A; Idm: 360A; 113.6W; TO263 Case: TO263 Drain-source voltage: 80V Drain current: 108A On-state resistance: 7mΩ Type of transistor: N-MOSFET Power dissipation: 113.6W Polarisation: unipolar Kind of package: reel; tape Gate charge: 65.8nC Kind of channel: enhancement Gate-source voltage: ±20V Pulsed drain current: 360A Mounting: SMD кількість в упаковці: 1 шт |
товару немає в наявності |
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PSMB055N08NS1_R2_00601 | Виробник : Panjit International Inc. |
Description: 80V/ 5.5MOHM / MV MOSFET Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 108A (Tc) Rds On (Max) @ Id, Vgs: 5.5mOhm @ 50A, 10V Power Dissipation (Max): 113.6W (Tc) Vgs(th) (Max) @ Id: 3.75V @ 250µA Supplier Device Package: TO-263 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 7V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 7 V Input Capacitance (Ciss) (Max) @ Vds: 4773 pF @ 40 V |
товару немає в наявності |
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| PSMB055N08NS1_R2_00601 | Виробник : PanJit Semiconductor |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 108A; Idm: 360A; 113.6W; TO263 Case: TO263 Drain-source voltage: 80V Drain current: 108A On-state resistance: 7mΩ Type of transistor: N-MOSFET Power dissipation: 113.6W Polarisation: unipolar Kind of package: reel; tape Gate charge: 65.8nC Kind of channel: enhancement Gate-source voltage: ±20V Pulsed drain current: 360A Mounting: SMD |
товару немає в наявності |