PSMN006-20K,518 Nexperia USA Inc.
Виробник: Nexperia USA Inc.Description: MOSFET N-CH 20V 32A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 32A (Tc)
Rds On (Max) @ Id, Vgs: 5mOhm @ 5A, 4.5V
Power Dissipation (Max): 8.3W (Tc)
Vgs(th) (Max) @ Id: 700mV @ 1mA (Typ)
Supplier Device Package: 8-SO
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 2.5 V
Input Capacitance (Ciss) (Max) @ Vds: 4350 pF @ 20 V
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Технічний опис PSMN006-20K,518 Nexperia USA Inc.
Description: MOSFET N-CH 20V 32A 8SO, Packaging: Tape & Reel (TR), Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 32A (Tc), Rds On (Max) @ Id, Vgs: 5mOhm @ 5A, 4.5V, Power Dissipation (Max): 8.3W (Tc), Vgs(th) (Max) @ Id: 700mV @ 1mA (Typ), Supplier Device Package: 8-SO, Part Status: Obsolete, Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V, Vgs (Max): ±10V, Drain to Source Voltage (Vdss): 20 V, Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 2.5 V, Input Capacitance (Ciss) (Max) @ Vds: 4350 pF @ 20 V.
Інші пропозиції PSMN006-20K,518
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
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PSMN006-20K,518 | Виробник : Nexperia |
Nexperia TAPE13 PWR-MOS |
товару немає в наявності |