PSMN009-100B,118

PSMN009-100B,118 Nexperia USA Inc.


PSMN009-100B.pdf Виробник: Nexperia USA Inc.
Description: NEXPERIA PSMN009-100B - 75A, 100
Packaging: Bulk
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 8.8mOhm @ 25A, 10V
Power Dissipation (Max): 230W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: D2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 156 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8250 pF @ 25 V
на замовлення 3762 шт:

термін постачання 21-31 дні (днів)
Кількість Ціна
241+93.11 грн
Мінімальне замовлення: 241
В кошику  од. на суму  грн.
Відгуки про товар
Написати відгук

Технічний опис PSMN009-100B,118 Nexperia USA Inc.

Description: NEXPERIA PSMN009-100B - 75A, 100, Packaging: Bulk, Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 75A (Tc), Rds On (Max) @ Id, Vgs: 8.8mOhm @ 25A, 10V, Power Dissipation (Max): 230W (Tc), Vgs(th) (Max) @ Id: 4V @ 1mA, Supplier Device Package: D2PAK, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 156 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 8250 pF @ 25 V.

Інші пропозиції PSMN009-100B,118

Фото Назва Виробник Інформація Доступність
Ціна
PSMN009-100B,118 PSMN009-100B,118 Виробник : Nexperia 4381948314474657psmn009-100b.pdf Trans MOSFET N-CH Si 100V 75A 3-Pin(2+Tab) D2PAK T/R
товару немає в наявності
В кошику  од. на суму  грн.
PSMN009-100B,118 PSMN009-100B,118 Виробник : NEXPERIA 4381948314474657psmn009-100b.pdf Trans MOSFET N-CH Si 100V 75A 3-Pin(2+Tab) D2PAK T/R
товару немає в наявності
В кошику  од. на суму  грн.
PSMN009-100B,118 Виробник : NEXPERIA PSMN009-100B.pdf PSMN009-100B.118 SMD N channel transistors
товару немає в наявності
В кошику  од. на суму  грн.
PSMN009-100B,118 PSMN009-100B,118 Виробник : Nexperia USA Inc. PSMN009-100B.pdf Description: MOSFET N-CH 100V 75A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 8.8mOhm @ 25A, 10V
Power Dissipation (Max): 230W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: D2PAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 156 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8250 pF @ 25 V
товару немає в наявності
В кошику  од. на суму  грн.
PSMN009-100B,118 PSMN009-100B,118 Виробник : Nexperia USA Inc. PSMN009-100B.pdf Description: MOSFET N-CH 100V 75A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 8.8mOhm @ 25A, 10V
Power Dissipation (Max): 230W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: D2PAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 156 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8250 pF @ 25 V
товару немає в наявності
В кошику  од. на суму  грн.
PSMN009-100B,118 PSMN009-100B,118 Виробник : Nexperia PSMN009_100B-2938899.pdf MOSFET PSMN009-100B/SOT404/D2PAK
товару немає в наявності
В кошику  од. на суму  грн.