PSMN009-100P,127 NXP Semiconductors
Виробник: NXP Semiconductors
Description: NEXPERIA PSMN009-100P - 75A, 100
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 8.8mOhm @ 25A, 10V
Power Dissipation (Max): 230W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-220AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 156 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8250 pF @ 25 V
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Технічний опис PSMN009-100P,127 NXP Semiconductors
Description: NEXPERIA PSMN009-100P - 75A, 100, Packaging: Bulk, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 75A (Tc), Rds On (Max) @ Id, Vgs: 8.8mOhm @ 25A, 10V, Power Dissipation (Max): 230W (Tc), Vgs(th) (Max) @ Id: 4V @ 1mA, Supplier Device Package: TO-220AB, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 156 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 8250 pF @ 25 V.
Інші пропозиції PSMN009-100P,127
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ |
|---|---|---|---|---|---|
 |
PSMN009-100P,127 | Nexperia USA Inc. |
Description: MOSFET N-CH 100V 75A TO220AB Input Capacitance (Ciss) (Max) @ Vds: 8250 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 156 nC @ 10 V Drain to Source Voltage (Vdss): 100 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Supplier Device Package: TO-220AB Vgs(th) (Max) @ Id: 4V @ 1mA Power Dissipation (Max): 230W (Tc) Rds On (Max) @ Id, Vgs: 8.8mOhm @ 25A, 10V Current - Continuous Drain (Id) @ 25°C: 75A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Packaging: Tube |
товару немає в наявності |
Мінімальне замовлення: 5000 шт В кошику од. на суму грн. |
 |
PSMN009-100P,127 | Nexperia |
MOSFET PSMN009-100P/SOT78/SIL3P |
товару немає в наявності |
Мінімальне замовлення: 5000 шт В кошику од. на суму грн. |
| PSMN009-100P,127 |
|
Виробник: Nexperia USA Inc.
Description: MOSFET N-CH 100V 75A TO220AB
Input Capacitance (Ciss) (Max) @ Vds: 8250 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 156 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-220AB
Vgs(th) (Max) @ Id: 4V @ 1mA
Power Dissipation (Max): 230W (Tc)
Rds On (Max) @ Id, Vgs: 8.8mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Description: MOSFET N-CH 100V 75A TO220AB
Input Capacitance (Ciss) (Max) @ Vds: 8250 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 156 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-220AB
Vgs(th) (Max) @ Id: 4V @ 1mA
Power Dissipation (Max): 230W (Tc)
Rds On (Max) @ Id, Vgs: 8.8mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
товару немає в наявності
Мінімальне замовлення: 5000 шт
В кошику
од. на суму грн.
| PSMN009-100P,127 |
|
Виробник: Nexperia
MOSFET PSMN009-100P/SOT78/SIL3P
MOSFET PSMN009-100P/SOT78/SIL3P
товару немає в наявності
Мінімальне замовлення: 5000 шт
В кошику
од. на суму грн.