| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 144.97 грн |
| 10+ | 127.82 грн |
| 100+ | 89.05 грн |
| 500+ | 73.18 грн |
| 1000+ | 60.75 грн |
| 2500+ | 56.61 грн |
| 5000+ | 54.54 грн |
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Технічний опис PSMN012-80PS,127 Nexperia
Description: MOSFET N-CH 80V 74A TO220AB, Mounting Type: Through Hole, Package / Case: TO-220-3, Packaging: Tube, Part Status: Active, Supplier Device Package: TO-220AB, Vgs(th) (Max) @ Id: 4V @ 1mA, Power Dissipation (Max): 148W (Tc), Rds On (Max) @ Id, Vgs: 11mOhm @ 15A, 10V, Current - Continuous Drain (Id) @ 25°C: 74A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Input Capacitance (Ciss) (Max) @ Vds: 2782 pF @ 12 V, Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V, Drain to Source Voltage (Vdss): 80 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V.
Інші пропозиції PSMN012-80PS,127
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ |
|---|---|---|---|---|---|
|
PSMN012-80PS,127 | Nexperia USA Inc. |
Description: MOSFET N-CH 80V 74A TO220ABMounting Type: Through Hole Package / Case: TO-220-3 Packaging: Tube Part Status: Active Supplier Device Package: TO-220AB Vgs(th) (Max) @ Id: 4V @ 1mA Power Dissipation (Max): 148W (Tc) Rds On (Max) @ Id, Vgs: 11mOhm @ 15A, 10V Current - Continuous Drain (Id) @ 25°C: 74A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Input Capacitance (Ciss) (Max) @ Vds: 2782 pF @ 12 V Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V Drain to Source Voltage (Vdss): 80 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V |
товару немає в наявності |
Мінімальне замовлення: 5000 шт В кошику од. на суму грн. |
| PSMN012-80PS,127 |
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Виробник: Nexperia USA Inc.
Description: MOSFET N-CH 80V 74A TO220AB
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Part Status: Active
Supplier Device Package: TO-220AB
Vgs(th) (Max) @ Id: 4V @ 1mA
Power Dissipation (Max): 148W (Tc)
Rds On (Max) @ Id, Vgs: 11mOhm @ 15A, 10V
Current - Continuous Drain (Id) @ 25°C: 74A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Input Capacitance (Ciss) (Max) @ Vds: 2782 pF @ 12 V
Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V
Drain to Source Voltage (Vdss): 80 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Description: MOSFET N-CH 80V 74A TO220AB
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Part Status: Active
Supplier Device Package: TO-220AB
Vgs(th) (Max) @ Id: 4V @ 1mA
Power Dissipation (Max): 148W (Tc)
Rds On (Max) @ Id, Vgs: 11mOhm @ 15A, 10V
Current - Continuous Drain (Id) @ 25°C: 74A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Input Capacitance (Ciss) (Max) @ Vds: 2782 pF @ 12 V
Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V
Drain to Source Voltage (Vdss): 80 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
товару немає в наявності
Мінімальне замовлення: 5000 шт
В кошику
од. на суму грн.




