PSMN013-100XS,127 NXP Semiconductors

Description: MOSFET N-CH 100V 35.2A TO220F, Packaging: Tube, Package / Case: TO-220-3 Full Pack, Isolated Tab, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 35.2A (Tc), Rds On (Max) @ Id, Vgs: 13.9mOhm @ 10A, 10V, Power Dissipation (Max): 48.4W (Tc), Vgs(th) (Max) @ Id: 4V @ 1mA, Supplier Device Package: TO-220F, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 57.5 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 3195 pF @ 50 V.