PSMN013-30YLC,115 Nexperia USA Inc.
Виробник: Nexperia USA Inc.
Description: MOSFET N-CH 30V 32A LFPAK56
Packaging: Tape & Reel (TR)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 32A (Tc)
Rds On (Max) @ Id, Vgs: 13.6mOhm @ 10A, 10V
Power Dissipation (Max): 26W (Tc)
Vgs(th) (Max) @ Id: 1.95V @ 1mA
Supplier Device Package: LFPAK56, Power-SO8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 8.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 521 pF @ 15 V
Відгуки про товар
Написати відгук
Технічний опис PSMN013-30YLC,115 Nexperia USA Inc.
Description: MOSFET N-CH 30V 32A LFPAK56, Packaging: Tape & Reel (TR), Package / Case: SC-100, SOT-669, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 32A (Tc), Rds On (Max) @ Id, Vgs: 13.6mOhm @ 10A, 10V, Power Dissipation (Max): 26W (Tc), Vgs(th) (Max) @ Id: 1.95V @ 1mA, Supplier Device Package: LFPAK56, Power-SO8, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 8.3 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 521 pF @ 15 V.
Інші пропозиції PSMN013-30YLC,115 за ціною від 13.86 грн до 74.46 грн
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
PSMN013-30YLC,115 | NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 32A; 26W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 32A Power dissipation: 26W Case: LFPAK56; PowerSO8; SOT669 Gate-source voltage: ±20V On-state resistance: 27.2mΩ Mounting: SMD Gate charge: 8.3nC Kind of package: reel; tape Kind of channel: enhancement |
на замовлення 1733 шт: термін постачання 14-30 дні (днів) |
|
||||||||||||||||
 |
PSMN013-30YLC,115 | Nexperia |
MOSFETs SOT669 N-CH 30V 32A |
на замовлення 8087 шт: термін постачання 21-30 дні (днів) |
|
||||||||||||||||
|
|
PSMN013-30YLC,115 | Nexperia USA Inc. |
Description: MOSFET N-CH 30V 32A LFPAK56 Input Capacitance (Ciss) (Max) @ Vds: 521 pF @ 15 V Gate Charge (Qg) (Max) @ Vgs: 8.3 nC @ 10 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: LFPAK56, Power-SO8 Vgs(th) (Max) @ Id: 1.95V @ 1mA Power Dissipation (Max): 26W (Tc) Rds On (Max) @ Id, Vgs: 13.6mOhm @ 10A, 10V Current - Continuous Drain (Id) @ 25°C: 32A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: SC-100, SOT-669 Packaging: Cut Tape (CT) |
на замовлення 4298 шт: термін постачання 21-31 дні (днів) |
|
| PSMN013-30YLC,115 |
|
Виробник: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 32A; 26W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 32A
Power dissipation: 26W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±20V
On-state resistance: 27.2mΩ
Mounting: SMD
Gate charge: 8.3nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 32A; 26W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 32A
Power dissipation: 26W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±20V
On-state resistance: 27.2mΩ
Mounting: SMD
Gate charge: 8.3nC
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 1733 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 11+ | 44.25 грн |
| 12+ | 35.39 грн |
| 25+ | 32.12 грн |
| 100+ | 23.23 грн |
| 250+ | 20.97 грн |
| 500+ | 19.37 грн |
| 1000+ | 18.53 грн |
| 1500+ | 16.61 грн |
| PSMN013-30YLC,115 |
|
Виробник: Nexperia
MOSFETs SOT669 N-CH 30V 32A
MOSFETs SOT669 N-CH 30V 32A
на замовлення 8087 шт:
термін постачання 21-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 6+ | 57.31 грн |
| 10+ | 34.85 грн |
| 100+ | 22.99 грн |
| 500+ | 18.05 грн |
| 1000+ | 15.26 грн |
| 1500+ | 13.86 грн |
| PSMN013-30YLC,115 |
|
Виробник: Nexperia USA Inc.
Description: MOSFET N-CH 30V 32A LFPAK56
Input Capacitance (Ciss) (Max) @ Vds: 521 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 8.3 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: LFPAK56, Power-SO8
Vgs(th) (Max) @ Id: 1.95V @ 1mA
Power Dissipation (Max): 26W (Tc)
Rds On (Max) @ Id, Vgs: 13.6mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 32A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-100, SOT-669
Packaging: Cut Tape (CT)
Description: MOSFET N-CH 30V 32A LFPAK56
Input Capacitance (Ciss) (Max) @ Vds: 521 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 8.3 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: LFPAK56, Power-SO8
Vgs(th) (Max) @ Id: 1.95V @ 1mA
Power Dissipation (Max): 26W (Tc)
Rds On (Max) @ Id, Vgs: 13.6mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 32A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-100, SOT-669
Packaging: Cut Tape (CT)
на замовлення 4298 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 5+ | 74.46 грн |
| 10+ | 44.68 грн |
| 50+ | 32.80 грн |
| 100+ | 27.19 грн |