PSMN013-40VLDX Nexperia USA Inc.
Виробник: Nexperia USA Inc.
Description: MOSFET 2N-CH 40V 42A LFPAK56D
Supplier Device Package: LFPAK56D
Vgs(th) (Max) @ Id: 2.2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 19.4nC @ 10V
Rds On (Max) @ Id, Vgs: 13.6mOhm @ 10A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 1160pF @ 25V
Current - Continuous Drain (Id) @ 25°C: 42A (Ta)
Drain to Source Voltage (Vdss): 40V
Power - Max: 46W (Ta)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Configuration: 2 N-Channel (Half Bridge)
Mounting Type: Surface Mount
Package / Case: SOT-1205, 8-LFPAK56
Packaging: Tape & Reel (TR)
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Технічний опис PSMN013-40VLDX Nexperia USA Inc.
Description: MOSFET 2N-CH 40V 42A LFPAK56D, Supplier Device Package: LFPAK56D, Vgs(th) (Max) @ Id: 2.2V @ 1mA, Gate Charge (Qg) (Max) @ Vgs: 19.4nC @ 10V, Rds On (Max) @ Id, Vgs: 13.6mOhm @ 10A, 10V, Input Capacitance (Ciss) (Max) @ Vds: 1160pF @ 25V, Current - Continuous Drain (Id) @ 25°C: 42A (Ta), Drain to Source Voltage (Vdss): 40V, Power - Max: 46W (Ta), Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Configuration: 2 N-Channel (Half Bridge), Mounting Type: Surface Mount, Package / Case: SOT-1205, 8-LFPAK56, Packaging: Tape & Reel (TR).
Інші пропозиції PSMN013-40VLDX за ціною від 36.06 грн до 164.60 грн
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||||||||||||
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PSMN013-40VLDX | NEXPERIA |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; NextPowerS3; unipolar; 40V; 30A; Idm: 169A Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 40V Drain current: 30A Pulsed drain current: 169A Power dissipation: 46W Case: LFPAK56D; SOT1205 Gate-source voltage: ±20V On-state resistance: 32.8mΩ Mounting: SMD Gate charge: 19.4nC Kind of package: reel; tape Kind of channel: enhancement Technology: NextPowerS3 |
на замовлення 1500 шт: термін постачання 14-30 дні (днів) |
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PSMN013-40VLDX | Nexperia |
MOSFETs The factory is currently not accepting orders for this product. |
на замовлення 1356 шт: термін постачання 21-30 дні (днів) |
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PSMN013-40VLDX | Nexperia USA Inc. |
Description: MOSFET 2N-CH 40V 42A LFPAK56D Current - Continuous Drain (Id) @ 25°C: 42A (Ta) Drain to Source Voltage (Vdss): 40V Power - Max: 46W (Ta) Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Configuration: 2 N-Channel (Half Bridge) Mounting Type: Surface Mount Package / Case: SOT-1205, 8-LFPAK56 Packaging: Cut Tape (CT) Supplier Device Package: LFPAK56D Vgs(th) (Max) @ Id: 2.2V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 19.4nC @ 10V Rds On (Max) @ Id, Vgs: 13.6mOhm @ 10A, 10V Input Capacitance (Ciss) (Max) @ Vds: 1160pF @ 25V |
на замовлення 5858 шт: термін постачання 21-31 дні (днів) |
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| PSMN013-40VLDX |
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Виробник: NEXPERIA
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; NextPowerS3; unipolar; 40V; 30A; Idm: 169A
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 30A
Pulsed drain current: 169A
Power dissipation: 46W
Case: LFPAK56D; SOT1205
Gate-source voltage: ±20V
On-state resistance: 32.8mΩ
Mounting: SMD
Gate charge: 19.4nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: NextPowerS3
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; NextPowerS3; unipolar; 40V; 30A; Idm: 169A
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 30A
Pulsed drain current: 169A
Power dissipation: 46W
Case: LFPAK56D; SOT1205
Gate-source voltage: ±20V
On-state resistance: 32.8mΩ
Mounting: SMD
Gate charge: 19.4nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: NextPowerS3
на замовлення 1500 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 6+ | 80.38 грн |
| 10+ | 61.22 грн |
| 25+ | 51.16 грн |
| 100+ | 46.13 грн |
| 250+ | 42.77 грн |
| 500+ | 40.26 грн |
| 1000+ | 36.90 грн |
| 1500+ | 36.06 грн |
| PSMN013-40VLDX |
|
Виробник: Nexperia
MOSFETs The factory is currently not accepting orders for this product.
MOSFETs The factory is currently not accepting orders for this product.
на замовлення 1356 шт:
термін постачання 21-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 147.12 грн |
| 10+ | 92.14 грн |
| 100+ | 54.07 грн |
| 500+ | 42.92 грн |
| 1000+ | 37.48 грн |
| PSMN013-40VLDX |
|
Виробник: Nexperia USA Inc.
Description: MOSFET 2N-CH 40V 42A LFPAK56D
Current - Continuous Drain (Id) @ 25°C: 42A (Ta)
Drain to Source Voltage (Vdss): 40V
Power - Max: 46W (Ta)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Configuration: 2 N-Channel (Half Bridge)
Mounting Type: Surface Mount
Package / Case: SOT-1205, 8-LFPAK56
Packaging: Cut Tape (CT)
Supplier Device Package: LFPAK56D
Vgs(th) (Max) @ Id: 2.2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 19.4nC @ 10V
Rds On (Max) @ Id, Vgs: 13.6mOhm @ 10A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 1160pF @ 25V
Description: MOSFET 2N-CH 40V 42A LFPAK56D
Current - Continuous Drain (Id) @ 25°C: 42A (Ta)
Drain to Source Voltage (Vdss): 40V
Power - Max: 46W (Ta)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Configuration: 2 N-Channel (Half Bridge)
Mounting Type: Surface Mount
Package / Case: SOT-1205, 8-LFPAK56
Packaging: Cut Tape (CT)
Supplier Device Package: LFPAK56D
Vgs(th) (Max) @ Id: 2.2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 19.4nC @ 10V
Rds On (Max) @ Id, Vgs: 13.6mOhm @ 10A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 1160pF @ 25V
на замовлення 5858 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 164.60 грн |
| 10+ | 100.99 грн |
| 50+ | 76.16 грн |
| 100+ | 63.94 грн |