PSMN015N10NS2_R2_00201 Panjit International Inc.
Виробник: Panjit International Inc.
Description: 100V/ 1.5M / TOLL FOR ESS/ BBU/
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 395A
Supplier Device Package: TOLL
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 128 nC @ 10 V
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 450.69 грн |
| 10+ | 291.88 грн |
| 100+ | 211.02 грн |
| 500+ | 185.06 грн |
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Технічний опис PSMN015N10NS2_R2_00201 Panjit International Inc.
Category: SMD N channel transistors, Description: Transistor: N-MOSFET; unipolar; 100V; 398A; Idm: 1592A; 250W; TOLL, Type of transistor: N-MOSFET, Polarisation: unipolar, Drain-source voltage: 100V, Drain current: 398A, Pulsed drain current: 1592A, Power dissipation: 250W, Case: TOLL, Gate-source voltage: ±20V, On-state resistance: 1.5mΩ, Mounting: SMD, Gate charge: 128nC, Kind of package: reel; tape, Kind of channel: enhancement.
Інші пропозиції PSMN015N10NS2_R2_00201
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ |
|---|---|---|---|---|---|
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PSMN015N10NS2_R2_00201 | Panjit International Inc. |
Description: 100V/ 1.5M / TOLL FOR ESS/ BBU/ Packaging: Tape & Reel (TR) Package / Case: 8-PowerSFN Mounting Type: Surface Mount Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 395A Supplier Device Package: TOLL Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 128 nC @ 10 V |
товару немає в наявності |
Мінімальне замовлення: 2000 шт В кошику од. на суму грн. |
 |
PSMN015N10NS2_R2_00201 | Panjit |
MOSFETs 100V 1.5mohms TOLL for ESS BBU LEV application |
товару немає в наявності |
Мінімальне замовлення: 2000 шт В кошику од. на суму грн. |
| PSMN015N10NS2_R2_00201 | PanJit Semiconductor |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 398A; Idm: 1592A; 250W; TOLL Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 398A Pulsed drain current: 1592A Power dissipation: 250W Case: TOLL Gate-source voltage: ±20V On-state resistance: 1.5mΩ Mounting: SMD Gate charge: 128nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. |
| PSMN015N10NS2_R2_00201 |
|
Виробник: Panjit International Inc.
Description: 100V/ 1.5M / TOLL FOR ESS/ BBU/
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 395A
Supplier Device Package: TOLL
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 128 nC @ 10 V
Description: 100V/ 1.5M / TOLL FOR ESS/ BBU/
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 395A
Supplier Device Package: TOLL
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 128 nC @ 10 V
товару немає в наявності
Мінімальне замовлення: 2000 шт
В кошику
од. на суму грн.
| PSMN015N10NS2_R2_00201 |
|
Виробник: Panjit
MOSFETs 100V 1.5mohms TOLL for ESS BBU LEV application
MOSFETs 100V 1.5mohms TOLL for ESS BBU LEV application
товару немає в наявності
Мінімальне замовлення: 2000 шт
В кошику
од. на суму грн.
| PSMN015N10NS2_R2_00201 |
|
Виробник: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 398A; Idm: 1592A; 250W; TOLL
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 398A
Pulsed drain current: 1592A
Power dissipation: 250W
Case: TOLL
Gate-source voltage: ±20V
On-state resistance: 1.5mΩ
Mounting: SMD
Gate charge: 128nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 398A; Idm: 1592A; 250W; TOLL
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 398A
Pulsed drain current: 1592A
Power dissipation: 250W
Case: TOLL
Gate-source voltage: ±20V
On-state resistance: 1.5mΩ
Mounting: SMD
Gate charge: 128nC
Kind of package: reel; tape
Kind of channel: enhancement
товару немає в наявності
В кошику
од. на суму грн.