PSMN017-30PL,127 NEXPERIA
Виробник: NEXPERIA
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 32A; Idm: 152A; 45W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 32A
Pulsed drain current: 152A
Power dissipation: 45W
Case: SOT78; TO220AB
Gate-source voltage: ±20V
On-state resistance: 24mΩ
Mounting: THT
Gate charge: 5.1nC
Kind of package: tube
Kind of channel: enhancement
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Технічний опис PSMN017-30PL,127 NEXPERIA
Description: MOSFET N-CH 30V 32A TO220AB, Input Capacitance (Ciss) (Max) @ Vds: 552 pF @ 15 V, Gate Charge (Qg) (Max) @ Vgs: 10.7 nC @ 10 V, Drain to Source Voltage (Vdss): 30 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Supplier Device Package: TO-220AB, Vgs(th) (Max) @ Id: 2.15V @ 1mA, Power Dissipation (Max): 45W (Tc), Rds On (Max) @ Id, Vgs: 17mOhm @ 10A, 10V, Current - Continuous Drain (Id) @ 25°C: 32A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Through Hole, Package / Case: TO-220-3, Packaging: Tube.
Інші пропозиції PSMN017-30PL,127 за ціною від 53.75 грн до 169.30 грн
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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PSMN017-30PL,127 | Nexperia USA Inc. |
Description: MOSFET N-CH 30V 32A TO220AB Input Capacitance (Ciss) (Max) @ Vds: 552 pF @ 15 V Gate Charge (Qg) (Max) @ Vgs: 10.7 nC @ 10 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Supplier Device Package: TO-220AB Vgs(th) (Max) @ Id: 2.15V @ 1mA Power Dissipation (Max): 45W (Tc) Rds On (Max) @ Id, Vgs: 17mOhm @ 10A, 10V Current - Continuous Drain (Id) @ 25°C: 32A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Packaging: Tube |
на замовлення 579 шт: термін постачання 21-31 дні (днів) |
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PSMN017-30PL,127 | Nexperia |
MOSFET PSMN017-30PL/SOT78/SIL3P |
на замовлення 1310 шт: термін постачання 21-30 дні (днів) |
В кошику од. на суму грн. |
| PSMN017-30PL,127 |
|
Виробник: Nexperia USA Inc.
Description: MOSFET N-CH 30V 32A TO220AB
Input Capacitance (Ciss) (Max) @ Vds: 552 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 10.7 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: TO-220AB
Vgs(th) (Max) @ Id: 2.15V @ 1mA
Power Dissipation (Max): 45W (Tc)
Rds On (Max) @ Id, Vgs: 17mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 32A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Description: MOSFET N-CH 30V 32A TO220AB
Input Capacitance (Ciss) (Max) @ Vds: 552 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 10.7 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: TO-220AB
Vgs(th) (Max) @ Id: 2.15V @ 1mA
Power Dissipation (Max): 45W (Tc)
Rds On (Max) @ Id, Vgs: 17mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 32A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
на замовлення 579 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 169.30 грн |
| 10+ | 104.76 грн |
| 100+ | 71.53 грн |
| 500+ | 53.75 грн |
| PSMN017-30PL,127 |
|
Виробник: Nexperia
MOSFET PSMN017-30PL/SOT78/SIL3P
MOSFET PSMN017-30PL/SOT78/SIL3P
на замовлення 1310 шт:
термін постачання 21-30 дні (днів)