PSMN017-80BS,118 Nexperia USA Inc.
Виробник: Nexperia USA Inc.Description: MOSFET N-CH 80V 50A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 17mOhm @ 10A, 10V
Power Dissipation (Max): 103W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: D2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1573 pF @ 40 V
на замовлення 5600 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 800+ | 54.82 грн |
| 1600+ | 43 грн |
| 2400+ | 40.48 грн |
| 5600+ | 36.18 грн |
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Технічний опис PSMN017-80BS,118 Nexperia USA Inc.
Description: MOSFET N-CH 80V 50A D2PAK, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 50A (Tc), Rds On (Max) @ Id, Vgs: 17mOhm @ 10A, 10V, Power Dissipation (Max): 103W (Tc), Vgs(th) (Max) @ Id: 4V @ 1mA, Supplier Device Package: D2PAK, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 80 V, Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1573 pF @ 40 V.
Інші пропозиції PSMN017-80BS,118 за ціною від 62.28 грн до 101.57 грн
| Фото | Назва | Виробник | Інформація |
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PSMN017-80BS,118 | Виробник : Nexperia USA Inc. |
Description: MOSFET N-CH 80V 50A D2PAK Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 50A (Tc) Rds On (Max) @ Id, Vgs: 17mOhm @ 10A, 10V Power Dissipation (Max): 103W (Tc) Vgs(th) (Max) @ Id: 4V @ 1mA Supplier Device Package: D2PAK Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1573 pF @ 40 V |
на замовлення 5993 шт: термін постачання 21-31 дні (днів) |
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PSMN017-80BS,118 | Виробник : Nexperia |
Trans MOSFET N-CH 80V 50A 3-Pin(2+Tab) D2PAK T/R |
товар відсутній |
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| PSMN017-80BS,118 | Виробник : NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 50A; Idm: 200A; 103W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 80V Drain current: 50A Pulsed drain current: 200A Power dissipation: 103W Case: D2PAK; SOT404 Gate-source voltage: ±20V On-state resistance: 15.2mΩ Mounting: SMD Gate charge: 26nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 1 шт |
товар відсутній |
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PSMN017-80BS,118 | Виробник : NEXPERIA |
Trans MOSFET N-CH 80V 50A 3-Pin(2+Tab) D2PAK T/R |
товар відсутній |
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PSMN017-80BS,118 | Виробник : Nexperia |
MOSFET PSMN017-80BS/SOT404/D2PAK |
товар відсутній |
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| PSMN017-80BS,118 | Виробник : NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 50A; Idm: 200A; 103W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 80V Drain current: 50A Pulsed drain current: 200A Power dissipation: 103W Case: D2PAK; SOT404 Gate-source voltage: ±20V On-state resistance: 15.2mΩ Mounting: SMD Gate charge: 26nC Kind of package: reel; tape Kind of channel: enhanced |
товар відсутній |