PSMN017-80PS,127 NEXPERIA
Виробник: NEXPERIA
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 50A; Idm: 200A; 103W
Case: SOT78; TO220AB
Type of transistor: N-MOSFET
Mounting: THT
Kind of package: tube
Polarisation: unipolar
Pulsed drain current: 200A
Drain current: 50A
Drain-source voltage: 80V
Gate-source voltage: ±20V
Gate charge: 26nC
On-state resistance: 15.2mΩ
Power dissipation: 103W
Kind of channel: enhancement
| Кількість | Ціна без ПДВ |
|---|---|
| 5+ | 85.54 грн |
| 10+ | 80.51 грн |
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Технічний опис PSMN017-80PS,127 NEXPERIA
Description: MOSFET N-CH 80V 50A TO220AB, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Active, Supplier Device Package: TO-220AB, Vgs(th) (Max) @ Id: 4V @ 1mA, Power Dissipation (Max): 103W (Tc), Rds On (Max) @ Id, Vgs: 17mOhm @ 10A, 10V, Current - Continuous Drain (Id) @ 25°C: 50A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Through Hole, Package / Case: TO-220-3, Packaging: Tube, Input Capacitance (Ciss) (Max) @ Vds: 1573 pF @ 40 V, Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V, Drain to Source Voltage (Vdss): 80 V, Vgs (Max): ±20V.
Інші пропозиції PSMN017-80PS,127 за ціною від 48.90 грн до 126.98 грн
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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PSMN017-80PS,127 | Nexperia USA Inc. |
Description: MOSFET N-CH 80V 50A TO220AB Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: TO-220AB Vgs(th) (Max) @ Id: 4V @ 1mA Power Dissipation (Max): 103W (Tc) Rds On (Max) @ Id, Vgs: 17mOhm @ 10A, 10V Current - Continuous Drain (Id) @ 25°C: 50A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Packaging: Tube Input Capacitance (Ciss) (Max) @ Vds: 1573 pF @ 40 V Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V Drain to Source Voltage (Vdss): 80 V Vgs (Max): ±20V |
на замовлення 5913 шт: термін постачання 21-31 дні (днів) |
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| PSMN017-80PS,127 |
|
Виробник: Nexperia USA Inc.
Description: MOSFET N-CH 80V 50A TO220AB
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-220AB
Vgs(th) (Max) @ Id: 4V @ 1mA
Power Dissipation (Max): 103W (Tc)
Rds On (Max) @ Id, Vgs: 17mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 1573 pF @ 40 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V
Drain to Source Voltage (Vdss): 80 V
Vgs (Max): ±20V
Description: MOSFET N-CH 80V 50A TO220AB
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-220AB
Vgs(th) (Max) @ Id: 4V @ 1mA
Power Dissipation (Max): 103W (Tc)
Rds On (Max) @ Id, Vgs: 17mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 1573 pF @ 40 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V
Drain to Source Voltage (Vdss): 80 V
Vgs (Max): ±20V
на замовлення 5913 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 126.98 грн |
| 10+ | 101.44 грн |
| 100+ | 80.70 грн |
| 500+ | 64.08 грн |
| 1000+ | 54.37 грн |
| 2000+ | 51.65 грн |
| 5000+ | 48.90 грн |