PSMN020-150W,127

PSMN020-150W,127 NXP Semiconductors


psmn020-150w_2.pdf Виробник: NXP Semiconductors
Trans MOSFET N-CH Si 150V 73A 3-Pin(3+Tab) TO-247 Tube
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Технічний опис PSMN020-150W,127 NXP Semiconductors

Description: MOSFET N-CH 150V 73A TO247-3, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 73A (Tc), Rds On (Max) @ Id, Vgs: 20mOhm @ 25A, 10V, Power Dissipation (Max): 300W (Tc), Vgs(th) (Max) @ Id: 4V @ 1mA, Supplier Device Package: TO-247, Part Status: Obsolete, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 150 V, Gate Charge (Qg) (Max) @ Vgs: 227 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 9537 pF @ 25 V.

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PSMN020-150W,127 PSMN020-150W,127 Виробник : NXP USA Inc. PSMN020-150W_2.pdf Description: MOSFET N-CH 150V 73A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 73A (Tc)
Rds On (Max) @ Id, Vgs: 20mOhm @ 25A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-247
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 227 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9537 pF @ 25 V
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PSMN020-150W,127 PSMN020-150W,127 Виробник : Nexperia nxp_psmn020-150w-1319526.pdf MOSFET RAIL PWR-MOS
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