Технічний опис PSMN023-40YLCX NEXPERIA
Description: MOSFET N-CH 40V 24A LFPAK56, Packaging: Tape & Reel (TR), Package / Case: SC-100, SOT-669, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 24A (Tc), Rds On (Max) @ Id, Vgs: 23mOhm @ 5A, 10V, Power Dissipation (Max): 25W (Tc), Vgs(th) (Max) @ Id: 1.95V @ 1mA, Supplier Device Package: LFPAK56, Power-SO8, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 8.4 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 520 pF @ 20 V.
Інші пропозиції PSMN023-40YLCX
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
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PSMN023-40YLCX | Виробник : NXP USA Inc. |
Description: MOSFET N-CH 40V 24A LFPAK56 Packaging: Tape & Reel (TR) Package / Case: SC-100, SOT-669 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 24A (Tc) Rds On (Max) @ Id, Vgs: 23mOhm @ 5A, 10V Power Dissipation (Max): 25W (Tc) Vgs(th) (Max) @ Id: 1.95V @ 1mA Supplier Device Package: LFPAK56, Power-SO8 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 8.4 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 520 pF @ 20 V |
товару немає в наявності |