PSMN028-100YS,115 Nexperia USA Inc.
Виробник: Nexperia USA Inc.
Description: MOSFET N-CH 100V 42A LFPAK56
Packaging: Tape & Reel (TR)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
Rds On (Max) @ Id, Vgs: 27.5mOhm @ 15A, 10V
Power Dissipation (Max): 89W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: LFPAK56, Power-SO8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1634 pF @ 50 V
Description: MOSFET N-CH 100V 42A LFPAK56
Packaging: Tape & Reel (TR)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
Rds On (Max) @ Id, Vgs: 27.5mOhm @ 15A, 10V
Power Dissipation (Max): 89W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: LFPAK56, Power-SO8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1634 pF @ 50 V
на замовлення 12000 шт:
термін постачання 21-31 дні (днів)
Кількість | Ціна без ПДВ |
---|---|
1500+ | 26.3 грн |
3000+ | 23.84 грн |
7500+ | 22.71 грн |
10500+ | 20.33 грн |
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Технічний опис PSMN028-100YS,115 Nexperia USA Inc.
Description: MOSFET N-CH 100V 42A LFPAK56, Packaging: Tape & Reel (TR), Package / Case: SC-100, SOT-669, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 42A (Tc), Rds On (Max) @ Id, Vgs: 27.5mOhm @ 15A, 10V, Power Dissipation (Max): 89W (Tc), Vgs(th) (Max) @ Id: 4V @ 1mA, Supplier Device Package: LFPAK56, Power-SO8, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1634 pF @ 50 V.
Інші пропозиції PSMN028-100YS,115 за ціною від 22.04 грн до 64.33 грн
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ | ||||||||||||||||
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PSMN028-100YS,115 | Виробник : Nexperia USA Inc. |
Description: MOSFET N-CH 100V 42A LFPAK56 Packaging: Cut Tape (CT) Package / Case: SC-100, SOT-669 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 42A (Tc) Rds On (Max) @ Id, Vgs: 27.5mOhm @ 15A, 10V Power Dissipation (Max): 89W (Tc) Vgs(th) (Max) @ Id: 4V @ 1mA Supplier Device Package: LFPAK56, Power-SO8 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1634 pF @ 50 V |
на замовлення 12215 шт: термін постачання 21-31 дні (днів) |
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PSMN028-100YS,115 | Виробник : Nexperia | MOSFET PSMN028-100YS/SOT669/LFPAK |
на замовлення 17205 шт: термін постачання 21-30 дні (днів) |
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PSMN028-100YS,115 | Виробник : Nexperia | Trans MOSFET N-CH 100V 42A 5-Pin(4+Tab) LFPAK T/R |
товар відсутній |
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PSMN028-100YS,115 | Виробник : NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 42A; Idm: 137A; 89W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 42A Pulsed drain current: 137A Power dissipation: 89W Case: LFPAK56; PowerSO8; SOT669 Gate-source voltage: ±20V On-state resistance: 49.9mΩ Mounting: SMD Gate charge: 33nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 1 шт |
товар відсутній |
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PSMN028-100YS,115 | Виробник : NEXPERIA | Trans MOSFET N-CH 100V 42A 5-Pin(4+Tab) LFPAK T/R |
товар відсутній |
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PSMN028-100YS,115 | Виробник : NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 42A; Idm: 137A; 89W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 42A Pulsed drain current: 137A Power dissipation: 89W Case: LFPAK56; PowerSO8; SOT669 Gate-source voltage: ±20V On-state resistance: 49.9mΩ Mounting: SMD Gate charge: 33nC Kind of package: reel; tape Kind of channel: enhanced |
товар відсутній |