PSMN028N10NS2_R2_00201 Panjit International Inc.
Виробник: Panjit International Inc.Description: 100V/ 2.8M / TOLL FOR INDUSTRAIL
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 240A
Supplier Device Package: TOLL
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V
на замовлення 1920 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 1+ | 386.61 грн |
| 10+ | 248.51 грн |
| 100+ | 178.06 грн |
| 500+ | 138.90 грн |
| 1000+ | 132.05 грн |
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Технічний опис PSMN028N10NS2_R2_00201 Panjit International Inc.
Category: SMD N channel transistors, Description: Transistor: N-MOSFET; unipolar; 100V; 240A; Idm: 960A; 167W; TOLL, Type of transistor: N-MOSFET, Polarisation: unipolar, Drain-source voltage: 100V, Drain current: 240A, Pulsed drain current: 960A, Power dissipation: 167W, Case: TOLL, Gate-source voltage: ±20V, On-state resistance: 2.8mΩ, Mounting: SMD, Gate charge: 65nC, Kind of package: reel; tape, Kind of channel: enhancement.
Інші пропозиції PSMN028N10NS2_R2_00201
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
| PSMN028N10NS2_R2_00201 | Виробник : Panjit International Inc. |
Description: 100V/ 2.8M / TOLL FOR INDUSTRAIL Packaging: Tape & Reel (TR) Package / Case: 8-PowerSFN Mounting Type: Surface Mount Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 240A Supplier Device Package: TOLL Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V |
товару немає в наявності |
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PSMN028N10NS2_R2_00201 | Виробник : Panjit |
MOSFETs 100V 2.8mohms TOLL for Industrail market |
товару немає в наявності |
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| PSMN028N10NS2_R2_00201 | Виробник : PanJit Semiconductor |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 240A; Idm: 960A; 167W; TOLL Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 240A Pulsed drain current: 960A Power dissipation: 167W Case: TOLL Gate-source voltage: ±20V On-state resistance: 2.8mΩ Mounting: SMD Gate charge: 65nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |