Технічний опис PSMN030-150P,127 Nexperia
Description: MOSFET N-CH 150V 55.5A TO220AB, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 55.5A (Tc), Rds On (Max) @ Id, Vgs: 30mOhm @ 25A, 10V, Power Dissipation (Max): 250W (Tc), Vgs(th) (Max) @ Id: 4V @ 1mA, Supplier Device Package: TO-220AB, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 150 V, Gate Charge (Qg) (Max) @ Vgs: 98 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 3680 pF @ 25 V.
Інші пропозиції PSMN030-150P,127
| Фото | Назва | Виробник | Інформація |
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PSMN030-150P,127 | Виробник : NEXPERIA |
 Trans MOSFET N-CH Si 150V 55.5A 3-Pin(3+Tab) TO-220AB Rail |
товару немає в наявності |
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| PSMN030-150P,127 | Виробник : NEXPERIA |
PSMN030-150P.127 THT N channel transistors |
товару немає в наявності |
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PSMN030-150P,127 | Виробник : Nexperia USA Inc. |
Description: MOSFET N-CH 150V 55.5A TO220AB Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 55.5A (Tc) Rds On (Max) @ Id, Vgs: 30mOhm @ 25A, 10V Power Dissipation (Max): 250W (Tc) Vgs(th) (Max) @ Id: 4V @ 1mA Supplier Device Package: TO-220AB Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 150 V Gate Charge (Qg) (Max) @ Vgs: 98 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3680 pF @ 25 V |
товару немає в наявності |
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PSMN030-150P,127 | Виробник : Nexperia |
MOSFET PSMN030-150P/SOT78/SIL3P |
товару немає в наявності |