PSMN040-100MSEX Nexperia USA Inc.
Виробник: Nexperia USA Inc.
Description: MOSFET N-CH 100V 30A LFPAK33
Input Capacitance (Ciss) (Max) @ Vds: 1470 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: LFPAK33
Vgs(th) (Max) @ Id: 4V @ 1mA
Power Dissipation (Max): 91W (Tc)
Rds On (Max) @ Id, Vgs: 36.6mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 30A (Tj)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-1210, 8-LFPAK33 (5-Lead)
Packaging: Tape & Reel (TR)
| Кількість | Ціна без ПДВ |
|---|---|
| 1500+ | 32.79 грн |
| 3000+ | 29.07 грн |
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Технічний опис PSMN040-100MSEX Nexperia USA Inc.
Description: MOSFET N-CH 100V 30A LFPAK33, Input Capacitance (Ciss) (Max) @ Vds: 1470 pF @ 50 V, Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V, Drain to Source Voltage (Vdss): 100 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Active, Supplier Device Package: LFPAK33, Vgs(th) (Max) @ Id: 4V @ 1mA, Power Dissipation (Max): 91W (Tc), Rds On (Max) @ Id, Vgs: 36.6mOhm @ 10A, 10V, Current - Continuous Drain (Id) @ 25°C: 30A (Tj), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Surface Mount, Package / Case: SOT-1210, 8-LFPAK33 (5-Lead), Packaging: Tape & Reel (TR).
Інші пропозиції PSMN040-100MSEX за ціною від 43.92 грн до 116.79 грн
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||||
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PSMN040-100MSEX | Nexperia USA Inc. |
Description: MOSFET N-CH 100V 30A LFPAK33 Input Capacitance (Ciss) (Max) @ Vds: 1470 pF @ 50 V Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V Drain to Source Voltage (Vdss): 100 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: LFPAK33 Vgs(th) (Max) @ Id: 4V @ 1mA Power Dissipation (Max): 91W (Tc) Rds On (Max) @ Id, Vgs: 36.6mOhm @ 10A, 10V Current - Continuous Drain (Id) @ 25°C: 30A (Tj) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-1210, 8-LFPAK33 (5-Lead) Packaging: Cut Tape (CT) |
на замовлення 27770 шт: термін постачання 21-31 дні (днів) |
|
| PSMN040-100MSEX |
|
Виробник: Nexperia USA Inc.
Description: MOSFET N-CH 100V 30A LFPAK33
Input Capacitance (Ciss) (Max) @ Vds: 1470 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: LFPAK33
Vgs(th) (Max) @ Id: 4V @ 1mA
Power Dissipation (Max): 91W (Tc)
Rds On (Max) @ Id, Vgs: 36.6mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 30A (Tj)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-1210, 8-LFPAK33 (5-Lead)
Packaging: Cut Tape (CT)
Description: MOSFET N-CH 100V 30A LFPAK33
Input Capacitance (Ciss) (Max) @ Vds: 1470 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: LFPAK33
Vgs(th) (Max) @ Id: 4V @ 1mA
Power Dissipation (Max): 91W (Tc)
Rds On (Max) @ Id, Vgs: 36.6mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 30A (Tj)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-1210, 8-LFPAK33 (5-Lead)
Packaging: Cut Tape (CT)
на замовлення 27770 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 116.79 грн |
| 10+ | 70.65 грн |
| 50+ | 52.62 грн |
| 100+ | 43.92 грн |