PSMN1R0-40ULDX Nexperia USA Inc.
Виробник: Nexperia USA Inc.
Description: MOSFET N-CH 40V 280A LFPAK56
Packaging: Tape & Reel (TR)
Package / Case: SOT-1023, 4-LFPAK
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 280A (Ta)
Power Dissipation (Max): 164W
Supplier Device Package: LFPAK56, Power-SO8
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 127 nC @ 10 V
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Технічний опис PSMN1R0-40ULDX Nexperia USA Inc.
Category: SMD N channel transistors, Description: Transistor: N-MOSFET; NextPowerS3; unipolar; 40V; 198A; Idm: 1168A, Type of transistor: N-MOSFET, Polarisation: unipolar, Drain-source voltage: 40V, Drain current: 198A, Pulsed drain current: 1168A, Power dissipation: 164W, Case: SOT1023A, Gate-source voltage: ±20V, On-state resistance: 2.45mΩ, Mounting: SMD, Gate charge: 127nC, Kind of package: reel; tape, Kind of channel: enhancement, Features of semiconductor devices: logic level, Technology: NextPowerS3.
Інші пропозиції PSMN1R0-40ULDX
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
 |
PSMN1R0-40ULDX | Nexperia |
MOSFETs SOT1023 N-CH 40V 280A |
товару немає в наявності |
Мінімальне замовлення: 1500 шт В кошику од. на суму грн. |
| PSMN1R0-40ULDX | NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; NextPowerS3; unipolar; 40V; 198A; Idm: 1168A Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 198A Pulsed drain current: 1168A Power dissipation: 164W Case: SOT1023A Gate-source voltage: ±20V On-state resistance: 2.45mΩ Mounting: SMD Gate charge: 127nC Kind of package: reel; tape Kind of channel: enhancement Features of semiconductor devices: logic level Technology: NextPowerS3 |
товару немає в наявності |
В кошику од. на суму грн. |
| PSMN1R0-40ULDX |
|
Виробник: Nexperia
MOSFETs SOT1023 N-CH 40V 280A
MOSFETs SOT1023 N-CH 40V 280A
товару немає в наявності
Мінімальне замовлення: 1500 шт
В кошику
од. на суму грн.
| PSMN1R0-40ULDX |
|
Виробник: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; NextPowerS3; unipolar; 40V; 198A; Idm: 1168A
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 198A
Pulsed drain current: 1168A
Power dissipation: 164W
Case: SOT1023A
Gate-source voltage: ±20V
On-state resistance: 2.45mΩ
Mounting: SMD
Gate charge: 127nC
Kind of package: reel; tape
Kind of channel: enhancement
Features of semiconductor devices: logic level
Technology: NextPowerS3
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; NextPowerS3; unipolar; 40V; 198A; Idm: 1168A
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 198A
Pulsed drain current: 1168A
Power dissipation: 164W
Case: SOT1023A
Gate-source voltage: ±20V
On-state resistance: 2.45mΩ
Mounting: SMD
Gate charge: 127nC
Kind of package: reel; tape
Kind of channel: enhancement
Features of semiconductor devices: logic level
Technology: NextPowerS3
товару немає в наявності
В кошику
од. на суму грн.