PSMN1R0-40YSHX Nexperia USA Inc.
Виробник: Nexperia USA Inc.Description: MOSFET N-CH 40V 290A LFPAK56
Packaging: Cut Tape (CT)
Package / Case: SOT-1023, 4-LFPAK
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 290A (Tc)
Rds On (Max) @ Id, Vgs: 1mOhm @ 25A, 10V
FET Feature: Schottky Diode (Body)
Power Dissipation (Max): 333W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 1mA
Supplier Device Package: LFPAK56; Power-SO8
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 122 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9433 pF @ 20 V
на замовлення 5827 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 1+ | 354.30 грн |
| 10+ | 225.11 грн |
| 100+ | 159.38 грн |
| 500+ | 123.26 грн |
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Технічний опис PSMN1R0-40YSHX Nexperia USA Inc.
Description: MOSFET N-CH 40V 290A LFPAK56, Packaging: Tape & Reel (TR), Package / Case: SOT-1023, 4-LFPAK, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 290A (Tc), Rds On (Max) @ Id, Vgs: 1mOhm @ 25A, 10V, FET Feature: Schottky Diode (Body), Power Dissipation (Max): 333W (Tc), Vgs(th) (Max) @ Id: 3.6V @ 1mA, Supplier Device Package: LFPAK56; Power-SO8, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 122 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 9433 pF @ 20 V.
Інші пропозиції PSMN1R0-40YSHX
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
| PSMN1R0-40YSHX | Виробник : NEXPERIA |
Trans MOSFET N-CH 40V 290A 5-Pin(4+Tab) LFPAK T/R |
товару немає в наявності |
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PSMN1R0-40YSHX | Виробник : Nexperia |
Trans MOSFET N-CH 40V 290A 5-Pin(4+Tab) LFPAK T/R |
товару немає в наявності |
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PSMN1R0-40YSHX | Виробник : Nexperia |
Trans MOSFET N-CH 40V 290A 5-Pin(4+Tab) LFPAK T/R |
товару немає в наявності |
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| PSMN1R0-40YSHX | Виробник : NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; NextPowerS3; unipolar; 40V; 277A; Idm: 1564A Type of transistor: N-MOSFET Technology: NextPowerS3 Polarisation: unipolar Drain-source voltage: 40V Drain current: 277A Pulsed drain current: 1564A Power dissipation: 333W Case: LFPAK56E; PowerSO8; SOT1023 Gate-source voltage: ±20V On-state resistance: 2.2mΩ Mounting: SMD Gate charge: 122nC Kind of package: reel; tape Kind of channel: enhancement кількість в упаковці: 1 шт |
товару немає в наявності |
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PSMN1R0-40YSHX | Виробник : Nexperia USA Inc. |
Description: MOSFET N-CH 40V 290A LFPAK56 Packaging: Tape & Reel (TR) Package / Case: SOT-1023, 4-LFPAK Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 290A (Tc) Rds On (Max) @ Id, Vgs: 1mOhm @ 25A, 10V FET Feature: Schottky Diode (Body) Power Dissipation (Max): 333W (Tc) Vgs(th) (Max) @ Id: 3.6V @ 1mA Supplier Device Package: LFPAK56; Power-SO8 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 122 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 9433 pF @ 20 V |
товару немає в наявності |
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PSMN1R0-40YSHX | Виробник : Nexperia |
MOSFETs SOT1023 N-CH 40V 290A |
товару немає в наявності |
|
| PSMN1R0-40YSHX | Виробник : NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; NextPowerS3; unipolar; 40V; 277A; Idm: 1564A Type of transistor: N-MOSFET Technology: NextPowerS3 Polarisation: unipolar Drain-source voltage: 40V Drain current: 277A Pulsed drain current: 1564A Power dissipation: 333W Case: LFPAK56E; PowerSO8; SOT1023 Gate-source voltage: ±20V On-state resistance: 2.2mΩ Mounting: SMD Gate charge: 122nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |