PSMN1R1-30EL,127 Nexperia USA Inc.

Description: MOSFET N-CH 30V 120A I2PAK, Input Capacitance (Ciss) (Max) @ Vds: 14850 pF @ 15 V, Gate Charge (Qg) (Max) @ Vgs: 243 nC @ 10 V, Drain to Source Voltage (Vdss): 30 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Part Status: Obsolete, Supplier Device Package: I2PAK, Vgs(th) (Max) @ Id: 2.2V @ 1mA, Power Dissipation (Max): 338W (Tc), Rds On (Max) @ Id, Vgs: 1.3mOhm @ 25A, 10V, Current - Continuous Drain (Id) @ 25°C: 120A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Through Hole, Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA, Packaging: Bulk.