на замовлення 11133 шт:
термін постачання 21-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 339.59 грн |
| 10+ | 281 грн |
| 25+ | 230.99 грн |
| 100+ | 198.28 грн |
| 250+ | 186.93 грн |
| 500+ | 175.58 грн |
| 1000+ | 160.23 грн |
Відгуки про товар
Написати відгук
Технічний опис PSMN1R2-55SLHAX Nexperia
Description: PSMN1R2-55SLH/SOT1235/LFPAK88, Packaging: Tape & Reel (TR), Package / Case: SOT-1235, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 330A (Tc), Rds On (Max) @ Id, Vgs: 1.03mOhm @ 25A, 10V, FET Feature: Schottky Diode (Isolated), Power Dissipation (Max): 375W (Tc), Vgs(th) (Max) @ Id: 2.2V @ 1mA, Supplier Device Package: LFPAK88 (SOT1235), Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 55 V, Gate Charge (Qg) (Max) @ Vgs: 395 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 25773 pF @ 27 V.
Інші пропозиції PSMN1R2-55SLHAX
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
|---|---|---|---|---|---|
 |
PSMN1R2-55SLHAX | Виробник : Nexperia USA Inc. |
 Description: PSMN1R2-55SLH/SOT1235/LFPAK88Packaging: Cut Tape (CT) Package / Case: SOT-1235 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 330A (Tc) Rds On (Max) @ Id, Vgs: 1.03mOhm @ 25A, 10V FET Feature: Schottky Diode (Isolated) Power Dissipation (Max): 375W (Tc) Vgs(th) (Max) @ Id: 2.2V @ 1mA Supplier Device Package: LFPAK88 (SOT1235) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 55 V Gate Charge (Qg) (Max) @ Vgs: 395 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 25773 pF @ 27 V |
на замовлення 2000 шт: термін постачання 21-31 дні (днів) |
|
| PSMN1R2-55SLHAX | Виробник : NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 55V; 284A; Idm: 1588A; 375W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 55V Drain current: 284A Pulsed drain current: 1588A Power dissipation: 375W Case: LFPAK88; SOT1235 Gate-source voltage: ±20V On-state resistance: 2.5mΩ Mounting: SMD Gate charge: 395nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 1 шт |
товар відсутній |
||
|
|
PSMN1R2-55SLHAX | Виробник : Nexperia USA Inc. |
Description: PSMN1R2-55SLH/SOT1235/LFPAK88 Packaging: Tape & Reel (TR) Package / Case: SOT-1235 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 330A (Tc) Rds On (Max) @ Id, Vgs: 1.03mOhm @ 25A, 10V FET Feature: Schottky Diode (Isolated) Power Dissipation (Max): 375W (Tc) Vgs(th) (Max) @ Id: 2.2V @ 1mA Supplier Device Package: LFPAK88 (SOT1235) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 55 V Gate Charge (Qg) (Max) @ Vgs: 395 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 25773 pF @ 27 V |
товар відсутній |
|
| PSMN1R2-55SLHAX | Виробник : NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 55V; 284A; Idm: 1588A; 375W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 55V Drain current: 284A Pulsed drain current: 1588A Power dissipation: 375W Case: LFPAK88; SOT1235 Gate-source voltage: ±20V On-state resistance: 2.5mΩ Mounting: SMD Gate charge: 395nC Kind of package: reel; tape Kind of channel: enhanced |
товар відсутній |