PSMN1R2-80ASEJ NEXPERIA
Виробник: NEXPERIA
Description: NEXPERIA - PSMN1R2-80ASEJ - Leistungs-MOSFET, n-Kanal, 80 V, 375 A, 1180 µohm, CCPAK1212, Oberflächenmontage
tariffCode: 85412900
productTraceability: No
rohsCompliant: Y-EX
euEccn: NLR
isCanonical: N
hazardous: false
Drain-Source-Durchgangswiderstand: 1180µohm
rohsPhthalatesCompliant: YES
usEccn: EAR99
SVHC: Lead (25-Jun-2025)
| Кількість | Ціна |
|---|---|
| 10+ | 574.78 грн |
| 50+ | 473.16 грн |
| 100+ | 380.16 грн |
| 250+ | 372.47 грн |
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Технічний опис PSMN1R2-80ASEJ NEXPERIA
Description: NEXPERIA - PSMN1R2-80ASEJ - Leistungs-MOSFET, n-Kanal, 80 V, 375 A, 1180 µohm, CCPAK1212, Oberflächenmontage, tariffCode: 85412900, Transistormontage: Oberflächenmontage, Drain-Source-Spannung Vds: 80V, rohsCompliant: Y-EX, Dauer-Drainstrom Id: 375A, hazardous: false, rohsPhthalatesCompliant: YES, Qualifikation: -, isCanonical: Y, usEccn: EAR99, Gate-Source-Schwellenspannung, max.: 3.6V, euEccn: NLR, Verlustleistung: 935W, Bauform - Transistor: CCPAK1212, Anzahl der Pins: 12Pin(s), Produktpalette: -, productTraceability: Yes-Date/Lot Code, Kanaltyp: n-Kanal, Rds(on)-Prüfspannung: 10V, Betriebstemperatur, max.: 175°C, Drain-Source-Durchgangswiderstand: 1180µohm, SVHC: Lead (25-Jun-2025).
Інші пропозиції PSMN1R2-80ASEJ за ціною від 280.36 грн до 843.83 грн
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PSMN1R2-80ASEJ | Виробник : Nexperia USA Inc. |
Description: N-CHANNEL, 80 V, 1.18 MOHM, MOSF Packaging: Cut Tape (CT) Package / Case: 12-BESOP (0.370", 9.40mm Width), Exposed Pad Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 375A (Ta) Rds On (Max) @ Id, Vgs: 1.18mOhm @ 25A, 10V Power Dissipation (Max): 935W (Tc) Vgs(th) (Max) @ Id: 3.6V @ 1mA Supplier Device Package: CCPAK1212 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 350 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 26187 pF @ 40 V |
на замовлення 250 шт: термін постачання 21-31 дні (днів) |
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PSMN1R2-80ASEJ | Виробник : NEXPERIA |
Description: NEXPERIA - PSMN1R2-80ASEJ - Leistungs-MOSFET, n-Kanal, 80 V, 375 A, 1180 µohm, CCPAK1212, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 80V rohsCompliant: Y-EX Dauer-Drainstrom Id: 375A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - isCanonical: Y usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 3.6V euEccn: NLR Verlustleistung: 935W Bauform - Transistor: CCPAK1212 Anzahl der Pins: 12Pin(s) Produktpalette: - productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 1180µohm SVHC: Lead (25-Jun-2025) |
на замовлення 942 шт: термін постачання 21-31 дні (днів) |
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PSMN1R2-80ASEJ | Виробник : Nexperia USA Inc. |
Description: N-CHANNEL, 80 V, 1.18 MOHM, MOSF Packaging: Tape & Reel (TR) Package / Case: 12-BESOP (0.370", 9.40mm Width), Exposed Pad Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 375A (Ta) Rds On (Max) @ Id, Vgs: 1.18mOhm @ 25A, 10V Power Dissipation (Max): 935W (Tc) Vgs(th) (Max) @ Id: 3.6V @ 1mA Supplier Device Package: CCPAK1212 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 350 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 26187 pF @ 40 V |
товару немає в наявності |