PSMN1R4-100ASEJ Nexperia
Виробник: NexperiaMOSFETs N-channel, 100 V, 1.36 mOhm, MOSFET with enhanced SOA in CCPAK1212 package
на замовлення 238 шт:
термін постачання 21-30 дні (днів)
| Кількість | Ціна |
|---|---|
| 1+ | 554.28 грн |
| 10+ | 446.48 грн |
| 100+ | 322.92 грн |
| 500+ | 296.94 грн |
| 1000+ | 251.65 грн |
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Технічний опис PSMN1R4-100ASEJ Nexperia
Description: N-CHANNEL, 100 V, 1.36 MOHM, MOS, Packaging: Tape & Reel (TR), Package / Case: 12-BESOP (0.370", 9.40mm Width), Exposed Pad, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 340A (Tc), Rds On (Max) @ Id, Vgs: 1.36mOhm @ 25A, 10V, Power Dissipation (Max): 935W (Tc), Vgs(th) (Max) @ Id: 3.6V @ 1mA, Supplier Device Package: CCPAK1212, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 366 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 26023 pF @ 50 V.
Інші пропозиції PSMN1R4-100ASEJ
| Фото | Назва | Виробник | Інформація |
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PSMN1R4-100ASEJ | Виробник : Nexperia USA Inc. |
Description: N-CHANNEL, 100 V, 1.36 MOHM, MOS Packaging: Tape & Reel (TR) Package / Case: 12-BESOP (0.370", 9.40mm Width), Exposed Pad Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 340A (Tc) Rds On (Max) @ Id, Vgs: 1.36mOhm @ 25A, 10V Power Dissipation (Max): 935W (Tc) Vgs(th) (Max) @ Id: 3.6V @ 1mA Supplier Device Package: CCPAK1212 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 366 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 26023 pF @ 50 V |
товару немає в наявності |
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PSMN1R4-100ASEJ | Виробник : Nexperia USA Inc. |
Description: N-CHANNEL, 100 V, 1.36 MOHM, MOS Packaging: Cut Tape (CT) Package / Case: 12-BESOP (0.370", 9.40mm Width), Exposed Pad Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 340A (Tc) Rds On (Max) @ Id, Vgs: 1.36mOhm @ 25A, 10V Power Dissipation (Max): 935W (Tc) Vgs(th) (Max) @ Id: 3.6V @ 1mA Supplier Device Package: CCPAK1212 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 366 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 26023 pF @ 50 V |
товару немає в наявності |