| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 310.51 грн |
| 10+ | 257.20 грн |
| 50+ | 218.07 грн |
| 100+ | 179.75 грн |
| 250+ | 176.27 грн |
| 500+ | 159.55 грн |
| 1000+ | 129.59 грн |
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Технічний опис PSMN1R5-40PS,127 Nexperia
Description: MOSFET N-CH 40V 120A TO220AB, Input Capacitance (Ciss) (Max) @ Vds: 9710 pF @ 20 V, Gate Charge (Qg) (Max) @ Vgs: 136 nC @ 10 V, Drain to Source Voltage (Vdss): 40 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Supplier Device Package: TO-220AB, Vgs(th) (Max) @ Id: 4V @ 1mA, Power Dissipation (Max): 338W (Tc), Rds On (Max) @ Id, Vgs: 1.6mOhm @ 25A, 10V, Current - Continuous Drain (Id) @ 25°C: 120A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Through Hole, Package / Case: TO-220-3, Packaging: Tube.
Інші пропозиції PSMN1R5-40PS,127 за ціною від 202.36 грн до 403.66 грн
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||
|---|---|---|---|---|---|---|---|---|---|---|---|
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PSMN1R5-40PS,127 | Nexperia USA Inc. |
 Description: MOSFET N-CH 40V 120A TO220ABInput Capacitance (Ciss) (Max) @ Vds: 9710 pF @ 20 V Gate Charge (Qg) (Max) @ Vgs: 136 nC @ 10 V Drain to Source Voltage (Vdss): 40 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Supplier Device Package: TO-220AB Vgs(th) (Max) @ Id: 4V @ 1mA Power Dissipation (Max): 338W (Tc) Rds On (Max) @ Id, Vgs: 1.6mOhm @ 25A, 10V Current - Continuous Drain (Id) @ 25°C: 120A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Packaging: Tube |
на замовлення 50 шт: термін постачання 21-31 дні (днів) |
|
| PSMN1R5-40PS,127 |
|
Виробник: Nexperia USA Inc.
Description: MOSFET N-CH 40V 120A TO220AB
Input Capacitance (Ciss) (Max) @ Vds: 9710 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 136 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-220AB
Vgs(th) (Max) @ Id: 4V @ 1mA
Power Dissipation (Max): 338W (Tc)
Rds On (Max) @ Id, Vgs: 1.6mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Description: MOSFET N-CH 40V 120A TO220AB
Input Capacitance (Ciss) (Max) @ Vds: 9710 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 136 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-220AB
Vgs(th) (Max) @ Id: 4V @ 1mA
Power Dissipation (Max): 338W (Tc)
Rds On (Max) @ Id, Vgs: 1.6mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
на замовлення 50 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 403.66 грн |
| 10+ | 258.21 грн |
| 50+ | 202.36 грн |