на замовлення 1546 шт:
термін постачання 21-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 160.05 грн |
| 10+ | 131.72 грн |
| 100+ | 91.23 грн |
| 250+ | 89.24 грн |
| 500+ | 77.25 грн |
| 1000+ | 71.26 грн |
| 1500+ | 60.53 грн |
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Технічний опис PSMN1R5-40YSDX Nexperia
Description: MOSFET N-CH 40V 240A LFPAK56, Packaging: Tape & Reel (TR), Package / Case: SC-100, SOT-669, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 240A (Ta), Rds On (Max) @ Id, Vgs: 1.5mOhm @ 25A, 10V, FET Feature: Schottky Diode (Body), Power Dissipation (Max): 238W (Ta), Vgs(th) (Max) @ Id: 3.6V @ 1mA, Supplier Device Package: LFPAK56, Power-SO8, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 99 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 7752 pF @ 20 V.
Інші пропозиції PSMN1R5-40YSDX за ціною від 89.26 грн до 166.4 грн
| Фото | Назва | Виробник | Інформація |
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PSMN1R5-40YSDX | Виробник : Nexperia USA Inc. |
 Description: MOSFET N-CH 40V 240A LFPAK56Packaging: Cut Tape (CT) Package / Case: SC-100, SOT-669 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 240A (Ta) Rds On (Max) @ Id, Vgs: 1.5mOhm @ 25A, 10V FET Feature: Schottky Diode (Body) Power Dissipation (Max): 238W (Ta) Vgs(th) (Max) @ Id: 3.6V @ 1mA Supplier Device Package: LFPAK56, Power-SO8 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 99 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 7752 pF @ 20 V |
на замовлення 1408 шт: термін постачання 21-31 дні (днів) |
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| PSMN1R5-40YSDX | Виробник : NEXPERIA |
N-Channel 40 V, 190 A Standard level MOSFET |
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| PSMN1R5-40YSDX | Виробник : NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; NextPowerS3; unipolar; 40V; 202A; Idm: 1145A Case: LFPAK56; PowerSO8; SOT669 Mounting: SMD Kind of package: reel; tape Technology: NextPowerS3 Kind of channel: enhanced Pulsed drain current: 1145A Drain-source voltage: 40V Drain current: 202A On-state resistance: 2.9mΩ Type of transistor: N-MOSFET Power dissipation: 238W Polarisation: unipolar Gate charge: 99nC Gate-source voltage: ±20V кількість в упаковці: 1 шт |
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PSMN1R5-40YSDX | Виробник : Nexperia USA Inc. |
Description: MOSFET N-CH 40V 240A LFPAK56 Packaging: Tape & Reel (TR) Package / Case: SC-100, SOT-669 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 240A (Ta) Rds On (Max) @ Id, Vgs: 1.5mOhm @ 25A, 10V FET Feature: Schottky Diode (Body) Power Dissipation (Max): 238W (Ta) Vgs(th) (Max) @ Id: 3.6V @ 1mA Supplier Device Package: LFPAK56, Power-SO8 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 99 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 7752 pF @ 20 V |
товар відсутній |
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| PSMN1R5-40YSDX | Виробник : NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; NextPowerS3; unipolar; 40V; 202A; Idm: 1145A Case: LFPAK56; PowerSO8; SOT669 Mounting: SMD Kind of package: reel; tape Technology: NextPowerS3 Kind of channel: enhanced Pulsed drain current: 1145A Drain-source voltage: 40V Drain current: 202A On-state resistance: 2.9mΩ Type of transistor: N-MOSFET Power dissipation: 238W Polarisation: unipolar Gate charge: 99nC Gate-source voltage: ±20V |
товар відсутній |