PSMN1R9-40PLQ Nexperia USA Inc.
Виробник: Nexperia USA Inc.
Description: MOSFET N-CH 40V 150A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 150A (Tc)
Rds On (Max) @ Id, Vgs: 1.7mOhm @ 25A, 10V
Power Dissipation (Max): 349W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 1mA
Supplier Device Package: TO-220AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 13200 pF @ 25 V
Description: MOSFET N-CH 40V 150A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 150A (Tc)
Rds On (Max) @ Id, Vgs: 1.7mOhm @ 25A, 10V
Power Dissipation (Max): 349W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 1mA
Supplier Device Package: TO-220AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 13200 pF @ 25 V
на замовлення 500 шт:
термін постачання 21-31 дні (днів)
Кількість | Ціна без ПДВ |
---|---|
2+ | 235.43 грн |
10+ | 190.55 грн |
100+ | 154.14 грн |
500+ | 128.59 грн |
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Технічний опис PSMN1R9-40PLQ Nexperia USA Inc.
Description: MOSFET N-CH 40V 150A TO220AB, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 150A (Tc), Rds On (Max) @ Id, Vgs: 1.7mOhm @ 25A, 10V, Power Dissipation (Max): 349W (Tc), Vgs(th) (Max) @ Id: 2.1V @ 1mA, Supplier Device Package: TO-220AB, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 5 V, Input Capacitance (Ciss) (Max) @ Vds: 13200 pF @ 25 V.
Інші пропозиції PSMN1R9-40PLQ за ціною від 114.83 грн до 277.28 грн
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ | ||||||||||||||||
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PSMN1R9-40PLQ | Виробник : Nexperia | MOSFET PSMN1R9-40PL/SOT78/SIL3P |
на замовлення 181 шт: термін постачання 21-30 дні (днів) |
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PSMN1R9-40PLQ | Виробник : NEXPERIA |
Category: THT N channel transistors Description: Transistor: N-MOSFET; Trench; unipolar; 40V; 150A; Idm: 1332A; 349W Type of transistor: N-MOSFET Technology: Trench Polarisation: unipolar Drain-source voltage: 40V Drain current: 150A Pulsed drain current: 1332A Power dissipation: 349W Case: SOT78; TO220AB Gate-source voltage: ±20V On-state resistance: 3.15mΩ Mounting: THT Gate charge: 230nC Kind of package: tube Kind of channel: enhanced кількість в упаковці: 1 шт |
товар відсутній |
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PSMN1R9-40PLQ | Виробник : Nexperia | Trans MOSFET N-CH 40V 150A 3-Pin(3+Tab) TO-220AB Rail |
товар відсутній |
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PSMN1R9-40PLQ | Виробник : NEXPERIA | Trans MOSFET N-CH 40V 150A 3-Pin(3+Tab) TO-220AB Rail |
товар відсутній |
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PSMN1R9-40PLQ | Виробник : NEXPERIA |
Category: THT N channel transistors Description: Transistor: N-MOSFET; Trench; unipolar; 40V; 150A; Idm: 1332A; 349W Type of transistor: N-MOSFET Technology: Trench Polarisation: unipolar Drain-source voltage: 40V Drain current: 150A Pulsed drain current: 1332A Power dissipation: 349W Case: SOT78; TO220AB Gate-source voltage: ±20V On-state resistance: 3.15mΩ Mounting: THT Gate charge: 230nC Kind of package: tube Kind of channel: enhanced |
товар відсутній |