на замовлення 1960 шт:
термін постачання 21-30 дні (днів)
| Кількість | Ціна |
|---|---|
| 3+ | 164.79 грн |
| 10+ | 104.91 грн |
| 100+ | 60.40 грн |
| 500+ | 48.26 грн |
| 1000+ | 48.19 грн |
| 1500+ | 41.12 грн |
| 4500+ | 39.14 грн |
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Технічний опис PSMN1R9-40YSBX Nexperia
Description: PSMN1R9-40YSB/SOT669/LFPAK, Packaging: Tape & Reel (TR), Package / Case: SC-100, SOT-669, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 200A (Tc), Rds On (Max) @ Id, Vgs: 1.9mOhm @ 25A, 10V, FET Feature: Schottky Diode (Body), Power Dissipation (Max): 194W (Tc), Vgs(th) (Max) @ Id: 3.6V @ 1mA, Supplier Device Package: LFPAK56, Power-SO8, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 78 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 6297 pF @ 20 V.
Інші пропозиції PSMN1R9-40YSBX
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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PSMN1R9-40YSBX | Виробник : Nexperia USA Inc. |
 Description: PSMN1R9-40YSB/SOT669/LFPAKPackaging: Tape & Reel (TR) Package / Case: SC-100, SOT-669 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 200A (Tc) Rds On (Max) @ Id, Vgs: 1.9mOhm @ 25A, 10V FET Feature: Schottky Diode (Body) Power Dissipation (Max): 194W (Tc) Vgs(th) (Max) @ Id: 3.6V @ 1mA Supplier Device Package: LFPAK56, Power-SO8 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 78 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6297 pF @ 20 V |
товару немає в наявності |
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PSMN1R9-40YSBX | Виробник : Nexperia USA Inc. |
Description: PSMN1R9-40YSB/SOT669/LFPAK Packaging: Cut Tape (CT) Package / Case: SC-100, SOT-669 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 200A (Tc) Rds On (Max) @ Id, Vgs: 1.9mOhm @ 25A, 10V FET Feature: Schottky Diode (Body) Power Dissipation (Max): 194W (Tc) Vgs(th) (Max) @ Id: 3.6V @ 1mA Supplier Device Package: LFPAK56, Power-SO8 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 78 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6297 pF @ 20 V |
товару немає в наявності |