PSMN1R9-40YSDX Nexperia USA Inc.
Виробник: Nexperia USA Inc.
Description: MOSFET N-CH 40V 200A LFPAK56
Input Capacitance (Ciss) (Max) @ Vds: 6198 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: LFPAK56, Power-SO8
Vgs(th) (Max) @ Id: 3.6V @ 1mA
Power Dissipation (Max): 194W (Tc)
FET Feature: Schottky Diode (Body)
Rds On (Max) @ Id, Vgs: 1.9mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 200A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-100, SOT-669
Packaging: Cut Tape (CT)
| Кількість | Ціна |
|---|---|
| 2+ | 178.80 грн |
| 10+ | 111.08 грн |
| 100+ | 76.16 грн |
| 500+ | 57.45 грн |
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Технічний опис PSMN1R9-40YSDX Nexperia USA Inc.
Description: MOSFET N-CH 40V 200A LFPAK56, FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Surface Mount, Package / Case: SC-100, SOT-669, Packaging: Tape & Reel (TR), Input Capacitance (Ciss) (Max) @ Vds: 6198 pF @ 20 V, Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V, Drain to Source Voltage (Vdss): 40 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Active, Supplier Device Package: LFPAK56, Power-SO8, Vgs(th) (Max) @ Id: 3.6V @ 1mA, Power Dissipation (Max): 194W (Tc), FET Feature: Schottky Diode (Body), Rds On (Max) @ Id, Vgs: 1.9mOhm @ 25A, 10V, Current - Continuous Drain (Id) @ 25°C: 200A (Tc).
Інші пропозиції PSMN1R9-40YSDX
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
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PSMN1R9-40YSDX | Nexperia USA Inc. |
Description: MOSFET N-CH 40V 200A LFPAK56 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: SC-100, SOT-669 Packaging: Tape & Reel (TR) Input Capacitance (Ciss) (Max) @ Vds: 6198 pF @ 20 V Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V Drain to Source Voltage (Vdss): 40 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: LFPAK56, Power-SO8 Vgs(th) (Max) @ Id: 3.6V @ 1mA Power Dissipation (Max): 194W (Tc) FET Feature: Schottky Diode (Body) Rds On (Max) @ Id, Vgs: 1.9mOhm @ 25A, 10V Current - Continuous Drain (Id) @ 25°C: 200A (Tc) |
товару немає в наявності |
Мінімальне замовлення: 1500 шт В кошику од. на суму грн. |
 |
PSMN1R9-40YSDX | Nexperia |
MOSFET PSMN1R9-40YSD/SOT669/LFPAK |
товару немає в наявності |
Мінімальне замовлення: 2 шт В кошику од. на суму грн. |
| PSMN1R9-40YSDX | NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; NextPowerS3; unipolar; 40V; 162A; Idm: 919A Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 162A Pulsed drain current: 919A Power dissipation: 194W Case: LFPAK56; PowerSO8; SOT669 Gate-source voltage: ±20V On-state resistance: 3.7mΩ Mounting: SMD Gate charge: 80nC Kind of package: reel; tape Kind of channel: enhancement Technology: NextPowerS3 |
товару немає в наявності |
В кошику од. на суму грн. |
| PSMN1R9-40YSDX |
|
Виробник: Nexperia USA Inc.
Description: MOSFET N-CH 40V 200A LFPAK56
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-100, SOT-669
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 6198 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: LFPAK56, Power-SO8
Vgs(th) (Max) @ Id: 3.6V @ 1mA
Power Dissipation (Max): 194W (Tc)
FET Feature: Schottky Diode (Body)
Rds On (Max) @ Id, Vgs: 1.9mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 200A (Tc)
Description: MOSFET N-CH 40V 200A LFPAK56
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-100, SOT-669
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 6198 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: LFPAK56, Power-SO8
Vgs(th) (Max) @ Id: 3.6V @ 1mA
Power Dissipation (Max): 194W (Tc)
FET Feature: Schottky Diode (Body)
Rds On (Max) @ Id, Vgs: 1.9mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 200A (Tc)
товару немає в наявності
Мінімальне замовлення: 1500 шт
В кошику
од. на суму грн.
| PSMN1R9-40YSDX |
|
Виробник: Nexperia
MOSFET PSMN1R9-40YSD/SOT669/LFPAK
MOSFET PSMN1R9-40YSD/SOT669/LFPAK
товару немає в наявності
Мінімальне замовлення: 2 шт
В кошику
од. на суму грн.
| PSMN1R9-40YSDX |
|
Виробник: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; NextPowerS3; unipolar; 40V; 162A; Idm: 919A
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 162A
Pulsed drain current: 919A
Power dissipation: 194W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±20V
On-state resistance: 3.7mΩ
Mounting: SMD
Gate charge: 80nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: NextPowerS3
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; NextPowerS3; unipolar; 40V; 162A; Idm: 919A
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 162A
Pulsed drain current: 919A
Power dissipation: 194W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±20V
On-state resistance: 3.7mΩ
Mounting: SMD
Gate charge: 80nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: NextPowerS3
товару немає в наявності
В кошику
од. на суму грн.