Технічний опис PSMN2R0-60PSRQ NEXPERIA
Description: MOSFET N-CH 60V 120A TO220AB, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 120A (Tc), Rds On (Max) @ Id, Vgs: 2.2mOhm @ 25A, 10V, Power Dissipation (Max): 338W (Tc), Vgs(th) (Max) @ Id: 4V @ 1mA, Supplier Device Package: TO-220AB, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 192 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 13500 pF @ 30 V.
Інші пропозиції PSMN2R0-60PSRQ
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
| PSMN2R0-60PSRQ | Виробник : NEXPERIA |
 PSMN2R0-60PSRQ THT N channel transistors |
товару немає в наявності |
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PSMN2R0-60PSRQ | Виробник : Nexperia USA Inc. |
Description: MOSFET N-CH 60V 120A TO220AB Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Rds On (Max) @ Id, Vgs: 2.2mOhm @ 25A, 10V Power Dissipation (Max): 338W (Tc) Vgs(th) (Max) @ Id: 4V @ 1mA Supplier Device Package: TO-220AB Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 192 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 13500 pF @ 30 V |
товару немає в наявності |
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| PSMN2R0-60PSRQ | Виробник : Nexperia |
MOSFET PSMN2R0-60PSR/SOT78/SIL3P |
товару немає в наявності |