Технічний опис PSMN2R1-40PLQ NEXPERIA
Description: MOSFET N-CH 40V 150A TO220AB, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 150A (Tc), Rds On (Max) @ Id, Vgs: 2.2mOhm @ 25A, 10V, Power Dissipation (Max): 293W (Tc), Vgs(th) (Max) @ Id: 2.1V @ 1mA, Supplier Device Package: TO-220AB, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 87.8 nC @ 5 V, Input Capacitance (Ciss) (Max) @ Vds: 9584 pF @ 25 V.
Інші пропозиції PSMN2R1-40PLQ
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
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PSMN2R1-40PLQ | Виробник : NEXPERIA |
 Trans MOSFET N-CH 40V 150A 3-Pin(3+Tab) TO-220AB Rail |
товару немає в наявності |
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PSMN2R1-40PLQ | Виробник : Nexperia USA Inc. |
Description: MOSFET N-CH 40V 150A TO220AB Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 150A (Tc) Rds On (Max) @ Id, Vgs: 2.2mOhm @ 25A, 10V Power Dissipation (Max): 293W (Tc) Vgs(th) (Max) @ Id: 2.1V @ 1mA Supplier Device Package: TO-220AB Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 87.8 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 9584 pF @ 25 V |
товару немає в наявності |
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PSMN2R1-40PLQ | Виробник : Nexperia |
MOSFET PSMN2R1-40PL/SOT78/SIL3P |
товару немає в наявності |