PSMN2R5-40YLBX Nexperia USA Inc.
Виробник: Nexperia USA Inc.Description: PSMN2R5-40YLB/SOT669/LFPAK
Packaging: Cut Tape (CT)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 160A (Tc)
Rds On (Max) @ Id, Vgs: 2.6mOhm @ 25A, 10V
FET Feature: Schottky Diode (Body)
Power Dissipation (Max): 147W (Tc)
Vgs(th) (Max) @ Id: 2.05V @ 1mA
Supplier Device Package: LFPAK56, Power-SO8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 79 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5627 pF @ 20 V
на замовлення 1425 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 3+ | 123.38 грн |
| 10+ | 75.03 грн |
| 50+ | 56.04 грн |
| 100+ | 46.84 грн |
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Технічний опис PSMN2R5-40YLBX Nexperia USA Inc.
Description: PSMN2R5-40YLB/SOT669/LFPAK, Packaging: Tape & Reel (TR), Package / Case: SC-100, SOT-669, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 160A (Tc), Rds On (Max) @ Id, Vgs: 2.6mOhm @ 25A, 10V, FET Feature: Schottky Diode (Body), Power Dissipation (Max): 147W (Tc), Vgs(th) (Max) @ Id: 2.05V @ 1mA, Supplier Device Package: LFPAK56, Power-SO8, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 79 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 5627 pF @ 20 V.
Інші пропозиції PSMN2R5-40YLBX за ціною від 32.46 грн до 143.78 грн
| Фото | Назва | Виробник | Інформація |
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PSMN2R5-40YLBX | Виробник : Nexperia |
MOSFETs SOT669 N-CH 40V 160A |
на замовлення 1890 шт: термін постачання 21-30 дні (днів) |
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PSMN2R5-40YLBX | Виробник : Nexperia USA Inc. |
Description: PSMN2R5-40YLB/SOT669/LFPAK Packaging: Tape & Reel (TR) Package / Case: SC-100, SOT-669 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 160A (Tc) Rds On (Max) @ Id, Vgs: 2.6mOhm @ 25A, 10V FET Feature: Schottky Diode (Body) Power Dissipation (Max): 147W (Tc) Vgs(th) (Max) @ Id: 2.05V @ 1mA Supplier Device Package: LFPAK56, Power-SO8 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 79 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5627 pF @ 20 V |
товару немає в наявності |