PSMN2R5-80SSEJ Nexperia USA Inc.
Виробник: Nexperia USA Inc.
Description: POWERMOS ASFETS
Packaging: Cut Tape (CT)
Package / Case: SOT-1235
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 190A (Ta)
Rds On (Max) @ Id, Vgs: 2.5mOhm @ 25A, 10V
Power Dissipation (Max): 341W (Ta)
Vgs(th) (Max) @ Id: 3.6V @ 1mA
Supplier Device Package: LFPAK88 (SOT1235)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 174 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13485 pF @ 40 V
Description: POWERMOS ASFETS
Packaging: Cut Tape (CT)
Package / Case: SOT-1235
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 190A (Ta)
Rds On (Max) @ Id, Vgs: 2.5mOhm @ 25A, 10V
Power Dissipation (Max): 341W (Ta)
Vgs(th) (Max) @ Id: 3.6V @ 1mA
Supplier Device Package: LFPAK88 (SOT1235)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 174 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13485 pF @ 40 V
на замовлення 1895 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 1+ | 372.34 грн |
| 10+ | 288.82 грн |
| 100+ | 233.58 грн |
| 500+ | 190.09 грн |
| 1000+ | 177.70 грн |
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Технічний опис PSMN2R5-80SSEJ Nexperia USA Inc.
Description: POWERMOS ASFETS, Packaging: Tape & Reel (TR), Package / Case: SOT-1235, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 190A (Ta), Rds On (Max) @ Id, Vgs: 2.5mOhm @ 25A, 10V, Power Dissipation (Max): 341W (Ta), Vgs(th) (Max) @ Id: 3.6V @ 1mA, Supplier Device Package: LFPAK88 (SOT1235), Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 80 V, Gate Charge (Qg) (Max) @ Vgs: 174 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 13485 pF @ 40 V.
Інші пропозиції PSMN2R5-80SSEJ за ціною від 194.49 грн до 405.00 грн
| Фото | Назва | Виробник | Інформація |
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PSMN2R5-80SSEJ | Виробник : Nexperia | MOSFETs PSMN2R5-80SSE/SOT1235/LFPAK88 |
на замовлення 2000 шт: термін постачання 21-30 дні (днів) |
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PSMN2R5-80SSEJ | Виробник : Nexperia USA Inc. |
Description: POWERMOS ASFETS Packaging: Tape & Reel (TR) Package / Case: SOT-1235 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 190A (Ta) Rds On (Max) @ Id, Vgs: 2.5mOhm @ 25A, 10V Power Dissipation (Max): 341W (Ta) Vgs(th) (Max) @ Id: 3.6V @ 1mA Supplier Device Package: LFPAK88 (SOT1235) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 174 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 13485 pF @ 40 V |
товару немає в наявності |