PSMN2R9-100SSEJ Nexperia USA Inc.
Виробник: Nexperia USA Inc.
Description: POWERMOS ASFETS
Packaging: Cut Tape (CT)
Package / Case: SOT-1235
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 210A (Ta)
Rds On (Max) @ Id, Vgs: 2.9mOhm @ 25A, 10V
Power Dissipation (Max): 341W (Ta)
Vgs(th) (Max) @ Id: 3.6V @ 1mA
Supplier Device Package: LFPAK88 (SOT1235)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 188 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13280 pF @ 50 V
Description: POWERMOS ASFETS
Packaging: Cut Tape (CT)
Package / Case: SOT-1235
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 210A (Ta)
Rds On (Max) @ Id, Vgs: 2.9mOhm @ 25A, 10V
Power Dissipation (Max): 341W (Ta)
Vgs(th) (Max) @ Id: 3.6V @ 1mA
Supplier Device Package: LFPAK88 (SOT1235)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 188 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13280 pF @ 50 V
на замовлення 1986 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 1+ | 373.23 грн |
| 10+ | 289.52 грн |
| 100+ | 234.15 грн |
| 500+ | 190.54 грн |
| 1000+ | 163.97 грн |
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Технічний опис PSMN2R9-100SSEJ Nexperia USA Inc.
Description: POWERMOS ASFETS, Packaging: Tape & Reel (TR), Package / Case: SOT-1235, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 210A (Ta), Rds On (Max) @ Id, Vgs: 2.9mOhm @ 25A, 10V, Power Dissipation (Max): 341W (Ta), Vgs(th) (Max) @ Id: 3.6V @ 1mA, Supplier Device Package: LFPAK88 (SOT1235), Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 188 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 13280 pF @ 50 V.
Інші пропозиції PSMN2R9-100SSEJ за ціною від 201.58 грн до 405.97 грн
| Фото | Назва | Виробник | Інформація |
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PSMN2R9-100SSEJ | Виробник : Nexperia | MOSFETs N-channel 25 V, 3.15 mΩ logic level MOSFET in LFPAK using NextPower technology |
на замовлення 2000 шт: термін постачання 21-30 дні (днів) |
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| PSMN2R9-100SSEJ | Виробник : NEXPERIA | N-channel 100 V, 2.9 mOhm MOSFET with enhanced SOA in LFPAK88 |
товару немає в наявності |
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PSMN2R9-100SSEJ | Виробник : Nexperia USA Inc. |
Description: POWERMOS ASFETS Packaging: Tape & Reel (TR) Package / Case: SOT-1235 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 210A (Ta) Rds On (Max) @ Id, Vgs: 2.9mOhm @ 25A, 10V Power Dissipation (Max): 341W (Ta) Vgs(th) (Max) @ Id: 3.6V @ 1mA Supplier Device Package: LFPAK88 (SOT1235) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 188 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 13280 pF @ 50 V |
товару немає в наявності |