| Кількість | Ціна без ПДВ |
|---|---|
| 16+ | 48.18 грн |
| 20+ | 39.41 грн |
| 50+ | 32.78 грн |
| 100+ | 28.00 грн |
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Технічний опис PSMN2R9-25YLC,115 Nexperia
Description: MOSFET N-CH 25V 100A LFPAK56, Packaging: Tape & Reel (TR), Package / Case: SC-100, SOT-669, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 100A (Tc), Rds On (Max) @ Id, Vgs: 3.15mOhm @ 25A, 10V, Power Dissipation (Max): 92W (Tc), Vgs(th) (Max) @ Id: 1.95V @ 1mA, Supplier Device Package: LFPAK56, Power-SO8, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 25 V, Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2083 pF @ 12 V.
Інші пропозиції PSMN2R9-25YLC,115
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ |
|---|---|---|---|---|---|
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PSMN2R9-25YLC,115 | Nexperia USA Inc. |
 Description: MOSFET N-CH 25V 100A LFPAK56Packaging: Tape & Reel (TR) Package / Case: SC-100, SOT-669 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Rds On (Max) @ Id, Vgs: 3.15mOhm @ 25A, 10V Power Dissipation (Max): 92W (Tc) Vgs(th) (Max) @ Id: 1.95V @ 1mA Supplier Device Package: LFPAK56, Power-SO8 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 25 V Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2083 pF @ 12 V |
товару немає в наявності |
Мінімальне замовлення: 1500 шт В кошику од. на суму грн. |
 |
PSMN2R9-25YLC,115 | Nexperia USA Inc. |
Description: MOSFET N-CH 25V 100A LFPAK56 Packaging: Cut Tape (CT) Package / Case: SC-100, SOT-669 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Rds On (Max) @ Id, Vgs: 3.15mOhm @ 25A, 10V Power Dissipation (Max): 92W (Tc) Vgs(th) (Max) @ Id: 1.95V @ 1mA Supplier Device Package: LFPAK56, Power-SO8 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 25 V Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2083 pF @ 12 V |
товару немає в наявності |
В кошику од. на суму грн. |
| PSMN2R9-25YLC,115 | NXP USA Inc. |
Description: MOSFET N-CH 25V 100A LFPAK Packaging: Tape & Reel (TR) |
товару немає в наявності |
В кошику од. на суму грн. | |
 |
PSMN2R9-25YLC,115 | Nexperia |
MOSFETs PSMN2R9-25YLC/SOT669/LFPAK |
товару немає в наявності |
В кошику од. на суму грн. |
 |
PSMN2R9-25YLC,115 | Nexperia |
Trans MOSFET N-CH 25V 100A 5-Pin(4+Tab) LFPAK T/R |
товару немає в наявності |
Мінімальне замовлення: 1500 шт В кошику од. на суму грн. |
| PSMN2R9-25YLC,115 |
|
Виробник: Nexperia USA Inc.
Description: MOSFET N-CH 25V 100A LFPAK56
Packaging: Tape & Reel (TR)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 3.15mOhm @ 25A, 10V
Power Dissipation (Max): 92W (Tc)
Vgs(th) (Max) @ Id: 1.95V @ 1mA
Supplier Device Package: LFPAK56, Power-SO8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2083 pF @ 12 V
Description: MOSFET N-CH 25V 100A LFPAK56
Packaging: Tape & Reel (TR)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 3.15mOhm @ 25A, 10V
Power Dissipation (Max): 92W (Tc)
Vgs(th) (Max) @ Id: 1.95V @ 1mA
Supplier Device Package: LFPAK56, Power-SO8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2083 pF @ 12 V
товару немає в наявності
Мінімальне замовлення: 1500 шт
В кошику
од. на суму грн.
| PSMN2R9-25YLC,115 |
|
Виробник: Nexperia USA Inc.
Description: MOSFET N-CH 25V 100A LFPAK56
Packaging: Cut Tape (CT)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 3.15mOhm @ 25A, 10V
Power Dissipation (Max): 92W (Tc)
Vgs(th) (Max) @ Id: 1.95V @ 1mA
Supplier Device Package: LFPAK56, Power-SO8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2083 pF @ 12 V
Description: MOSFET N-CH 25V 100A LFPAK56
Packaging: Cut Tape (CT)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 3.15mOhm @ 25A, 10V
Power Dissipation (Max): 92W (Tc)
Vgs(th) (Max) @ Id: 1.95V @ 1mA
Supplier Device Package: LFPAK56, Power-SO8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2083 pF @ 12 V
товару немає в наявності
В кошику
од. на суму грн.
| PSMN2R9-25YLC,115 |
|
Виробник: Nexperia
MOSFETs PSMN2R9-25YLC/SOT669/LFPAK
MOSFETs PSMN2R9-25YLC/SOT669/LFPAK
товару немає в наявності
В кошику
од. на суму грн.
| PSMN2R9-25YLC,115 |
|
Виробник: Nexperia
Trans MOSFET N-CH 25V 100A 5-Pin(4+Tab) LFPAK T/R
Trans MOSFET N-CH 25V 100A 5-Pin(4+Tab) LFPAK T/R
товару немає в наявності
Мінімальне замовлення: 1500 шт
В кошику
од. на суму грн.