PSMN3R2-25YLC,115 NXP USA Inc.
Виробник: NXP USA Inc.
Description: MOSFET N-CH 25V 100A LFPAK56
Input Capacitance (Ciss) (Max) @ Vds: 1781 pF @ 12 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Drain to Source Voltage (Vdss): 25 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: LFPAK56, Power-SO8
Vgs(th) (Max) @ Id: 1.95V @ 1mA
Power Dissipation (Max): 79W (Tc)
Rds On (Max) @ Id, Vgs: 3.4mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-100, SOT-669
Packaging: Tape & Reel (TR)
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Технічний опис PSMN3R2-25YLC,115 NXP USA Inc.
Description: MOSFET N-CH 25V 100A LFPAK56, Input Capacitance (Ciss) (Max) @ Vds: 1781 pF @ 12 V, Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V, Drain to Source Voltage (Vdss): 25 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Supplier Device Package: LFPAK56, Power-SO8, Vgs(th) (Max) @ Id: 1.95V @ 1mA, Power Dissipation (Max): 79W (Tc), Rds On (Max) @ Id, Vgs: 3.4mOhm @ 25A, 10V, Current - Continuous Drain (Id) @ 25°C: 100A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Surface Mount, Package / Case: SC-100, SOT-669, Packaging: Tape & Reel (TR).
Інші пропозиції PSMN3R2-25YLC,115
| Фото | Назва | Виробник | Інформація |
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PSMN3R2-25YLC,115 | NXP USA Inc. |
Description: MOSFET N-CH 25V 100A LFPAK56 Input Capacitance (Ciss) (Max) @ Vds: 1781 pF @ 12 V Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V Drain to Source Voltage (Vdss): 25 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Supplier Device Package: LFPAK56, Power-SO8 Vgs(th) (Max) @ Id: 1.95V @ 1mA Power Dissipation (Max): 79W (Tc) Rds On (Max) @ Id, Vgs: 3.4mOhm @ 25A, 10V Current - Continuous Drain (Id) @ 25°C: 100A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: SC-100, SOT-669 Packaging: Cut Tape (CT) |
товару немає в наявності |
В кошику од. на суму грн. |
| PSMN3R2-25YLC,115 |
Виробник: NXP USA Inc.
Description: MOSFET N-CH 25V 100A LFPAK56
Input Capacitance (Ciss) (Max) @ Vds: 1781 pF @ 12 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Drain to Source Voltage (Vdss): 25 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: LFPAK56, Power-SO8
Vgs(th) (Max) @ Id: 1.95V @ 1mA
Power Dissipation (Max): 79W (Tc)
Rds On (Max) @ Id, Vgs: 3.4mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-100, SOT-669
Packaging: Cut Tape (CT)
Description: MOSFET N-CH 25V 100A LFPAK56
Input Capacitance (Ciss) (Max) @ Vds: 1781 pF @ 12 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Drain to Source Voltage (Vdss): 25 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: LFPAK56, Power-SO8
Vgs(th) (Max) @ Id: 1.95V @ 1mA
Power Dissipation (Max): 79W (Tc)
Rds On (Max) @ Id, Vgs: 3.4mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-100, SOT-669
Packaging: Cut Tape (CT)
товару немає в наявності
В кошику
од. на суму грн.