PSMN3R3-100SSFJ Nexperia
| Кількість | Ціна |
|---|---|
| 1+ | 336.45 грн |
| 10+ | 220.03 грн |
| 100+ | 149.43 грн |
| 500+ | 132.67 грн |
| 1000+ | 130.58 грн |
| 2000+ | 110.33 грн |
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Технічний опис PSMN3R3-100SSFJ Nexperia
Description: NEXTPOWER 80/100V MOSFETS, Input Capacitance (Ciss) (Max) @ Vds: 9940 pF @ 50 V, Gate Charge (Qg) (Max) @ Vgs: 159 nC @ 10 V, Drain to Source Voltage (Vdss): 100 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 7V, 10V, Supplier Device Package: LFPAK88 (SOT1235), Vgs(th) (Max) @ Id: 4V @ 1mA, Power Dissipation (Max): 341W (Ta), Rds On (Max) @ Id, Vgs: 3.3mOhm @ 25A, 10V, Current - Continuous Drain (Id) @ 25°C: 180A (Ta), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Surface Mount, Package / Case: SOT-1235, Packaging: Tape & Reel (TR).
Інші пропозиції PSMN3R3-100SSFJ за ціною від 151.68 грн до 358.22 грн
| Фото | Назва | Виробник | Інформація | Доступність | Ціна |
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PSMN3R3-100SSFJ | Nexperia USA Inc. |
 Description: NEXTPOWER 80/100V MOSFETSInput Capacitance (Ciss) (Max) @ Vds: 9940 pF @ 50 V Gate Charge (Qg) (Max) @ Vgs: 159 nC @ 10 V Drain to Source Voltage (Vdss): 100 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 7V, 10V Supplier Device Package: LFPAK88 (SOT1235) Vgs(th) (Max) @ Id: 4V @ 1mA Power Dissipation (Max): 341W (Ta) Rds On (Max) @ Id, Vgs: 3.3mOhm @ 25A, 10V Current - Continuous Drain (Id) @ 25°C: 180A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-1235 Packaging: Cut Tape (CT) |
на замовлення 688 шт: термін постачання 21-31 дні (днів) |
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| PSMN3R3-100SSFJ |
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Виробник: Nexperia USA Inc.
Description: NEXTPOWER 80/100V MOSFETS
Input Capacitance (Ciss) (Max) @ Vds: 9940 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 159 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Supplier Device Package: LFPAK88 (SOT1235)
Vgs(th) (Max) @ Id: 4V @ 1mA
Power Dissipation (Max): 341W (Ta)
Rds On (Max) @ Id, Vgs: 3.3mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 180A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-1235
Packaging: Cut Tape (CT)
Description: NEXTPOWER 80/100V MOSFETS
Input Capacitance (Ciss) (Max) @ Vds: 9940 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 159 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Supplier Device Package: LFPAK88 (SOT1235)
Vgs(th) (Max) @ Id: 4V @ 1mA
Power Dissipation (Max): 341W (Ta)
Rds On (Max) @ Id, Vgs: 3.3mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 180A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-1235
Packaging: Cut Tape (CT)
на замовлення 688 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 1+ | 358.22 грн |
| 10+ | 228.00 грн |
| 50+ | 177.80 грн |
| 100+ | 151.68 грн |