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|---|---|
| 4+ | 92.87 грн |
| 10+ | 56.53 грн |
| 100+ | 32.33 грн |
| 500+ | 25.42 грн |
| 1000+ | 22.34 грн |
| 1500+ | 16.97 грн |
| 3000+ | 16.41 грн |
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Технічний опис PSMN4R0-25YLC,115 Nexperia
Description: MOSFET N-CH 25V 84A LFPAK56, Rds On (Max) @ Id, Vgs: 4.5mOhm @ 20A, 10V, Current - Continuous Drain (Id) @ 25°C: 84A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Surface Mount, Package / Case: SC-100, SOT-669, Packaging: Tape & Reel (TR), Input Capacitance (Ciss) (Max) @ Vds: 1407 pF @ 12 V, Gate Charge (Qg) (Max) @ Vgs: 22.8 nC @ 10 V, Drain to Source Voltage (Vdss): 25 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Part Status: Active, Supplier Device Package: LFPAK56, Power-SO8, Vgs(th) (Max) @ Id: 1.95V @ 1mA, Power Dissipation (Max): 61W (Tc).
Інші пропозиції PSMN4R0-25YLC,115
| Фото | Назва | Виробник | Інформація | Доступність | Ціна |
|---|---|---|---|---|---|
 |
PSMN4R0-25YLC,115 | Nexperia USA Inc. |
 Description: MOSFET N-CH 25V 84A LFPAK56Rds On (Max) @ Id, Vgs: 4.5mOhm @ 20A, 10V Current - Continuous Drain (Id) @ 25°C: 84A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: SC-100, SOT-669 Packaging: Tape & Reel (TR) Input Capacitance (Ciss) (Max) @ Vds: 1407 pF @ 12 V Gate Charge (Qg) (Max) @ Vgs: 22.8 nC @ 10 V Drain to Source Voltage (Vdss): 25 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Active Supplier Device Package: LFPAK56, Power-SO8 Vgs(th) (Max) @ Id: 1.95V @ 1mA Power Dissipation (Max): 61W (Tc) |
товару немає в наявності |
Мінімальне замовлення: 1500 шт В кошику од. на суму грн. |
| PSMN4R0-25YLC,115 |
|
Виробник: Nexperia USA Inc.
Description: MOSFET N-CH 25V 84A LFPAK56
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 84A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-100, SOT-669
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 1407 pF @ 12 V
Gate Charge (Qg) (Max) @ Vgs: 22.8 nC @ 10 V
Drain to Source Voltage (Vdss): 25 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: LFPAK56, Power-SO8
Vgs(th) (Max) @ Id: 1.95V @ 1mA
Power Dissipation (Max): 61W (Tc)
Description: MOSFET N-CH 25V 84A LFPAK56
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 84A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-100, SOT-669
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 1407 pF @ 12 V
Gate Charge (Qg) (Max) @ Vgs: 22.8 nC @ 10 V
Drain to Source Voltage (Vdss): 25 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: LFPAK56, Power-SO8
Vgs(th) (Max) @ Id: 1.95V @ 1mA
Power Dissipation (Max): 61W (Tc)
товару немає в наявності
Мінімальне замовлення: 1500 шт
В кошику
од. на суму грн.