на замовлення 4432 шт:
термін постачання 21-30 дні (днів)
| Кількість | Ціна |
|---|---|
| 5+ | 78.94 грн |
| 100+ | 49.29 грн |
| 500+ | 36.33 грн |
| 1000+ | 32.29 грн |
| 1500+ | 32.22 грн |
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Технічний опис PSMN4R3-40MLHX Nexperia
Description: MOSFET N-CH 40V 95A LFPAK33, Packaging: Tape & Reel (TR), Package / Case: SOT-1210, 8-LFPAK33 (5-Lead), Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 95A (Ta), Rds On (Max) @ Id, Vgs: 4.3mOhm @ 25A, 10V, Power Dissipation (Max): 90W (Ta), Vgs(th) (Max) @ Id: 2.15V @ 1mA, Supplier Device Package: LFPAK33, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 3007 pF @ 20 V.
Інші пропозиції PSMN4R3-40MLHX
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
| PSMN4R3-40MLHX | Виробник : NEXPERIA |
 Trans MOSFET N-CH 40V 95A 8-Pin LFPAK EP T/R |
товару немає в наявності |
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| PSMN4R3-40MLHX | Виробник : NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; NextPowerS3; unipolar; 40V; 69A; Idm: 392A Mounting: SMD Case: LFPAK33; SOT1210 Kind of package: reel; tape Drain-source voltage: 40V Drain current: 69A On-state resistance: 12mΩ Type of transistor: N-MOSFET Power dissipation: 90W Polarisation: unipolar Gate charge: 43nC Technology: NextPowerS3 Kind of channel: enhancement Gate-source voltage: ±20V Pulsed drain current: 392A кількість в упаковці: 1 шт |
товару немає в наявності |
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PSMN4R3-40MLHX | Виробник : Nexperia |
Trans MOSFET N-CH 40V 95A 8-Pin LFPAK EP T/R |
товару немає в наявності |
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PSMN4R3-40MLHX | Виробник : Nexperia USA Inc. |
Description: MOSFET N-CH 40V 95A LFPAK33 Packaging: Tape & Reel (TR) Package / Case: SOT-1210, 8-LFPAK33 (5-Lead) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 95A (Ta) Rds On (Max) @ Id, Vgs: 4.3mOhm @ 25A, 10V Power Dissipation (Max): 90W (Ta) Vgs(th) (Max) @ Id: 2.15V @ 1mA Supplier Device Package: LFPAK33 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3007 pF @ 20 V |
товару немає в наявності |
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PSMN4R3-40MLHX | Виробник : Nexperia USA Inc. |
Description: MOSFET N-CH 40V 95A LFPAK33 Packaging: Cut Tape (CT) Package / Case: SOT-1210, 8-LFPAK33 (5-Lead) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 95A (Ta) Rds On (Max) @ Id, Vgs: 4.3mOhm @ 25A, 10V Power Dissipation (Max): 90W (Ta) Vgs(th) (Max) @ Id: 2.15V @ 1mA Supplier Device Package: LFPAK33 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3007 pF @ 20 V |
товару немає в наявності |
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| PSMN4R3-40MLHX | Виробник : NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; NextPowerS3; unipolar; 40V; 69A; Idm: 392A Mounting: SMD Case: LFPAK33; SOT1210 Kind of package: reel; tape Drain-source voltage: 40V Drain current: 69A On-state resistance: 12mΩ Type of transistor: N-MOSFET Power dissipation: 90W Polarisation: unipolar Gate charge: 43nC Technology: NextPowerS3 Kind of channel: enhancement Gate-source voltage: ±20V Pulsed drain current: 392A |
товару немає в наявності |